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SDP04S60 PDF预览

SDP04S60

更新时间: 2024-11-04 22:16:43
品牌 Logo 应用领域
英飞凌 - INFINEON 整流二极管肖特基二极管局域网
页数 文件大小 规格书
9页 274K
描述
Silicon Carbide Schottky Diode

SDP04S60 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:R-PSFM-T3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.24应用:GENERAL PURPOSE
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON CARBIDE二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.9 VJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3最大非重复峰值正向电流:12.5 A
元件数量:1相数:1
端子数量:3最高工作温度:175 °C
最大输出电流:4 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED最大功率耗散:36.5 W
认证状态:Not Qualified最大重复峰值反向电压:600 V
子类别:Rectifier Diodes表面贴装:NO
技术:SCHOTTKY端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

SDP04S60 数据手册

 浏览型号SDP04S60的Datasheet PDF文件第2页浏览型号SDP04S60的Datasheet PDF文件第3页浏览型号SDP04S60的Datasheet PDF文件第4页浏览型号SDP04S60的Datasheet PDF文件第5页浏览型号SDP04S60的Datasheet PDF文件第6页浏览型号SDP04S60的Datasheet PDF文件第7页 
SDP04S60, SDD04S60  
SDT04S60  
Final data  
Silicon Carbide Schottky Diode  
Worlds first 600V Schottky diode  
Revolutionary semiconductor  
material - Silicon Carbide  
Product Summary  
V
V
600  
13  
4
RRM  
Q
nC  
A
c
Switching behavior benchmark  
No reverse recovery  
No temperature influence on  
the switching behavior  
I
F
P-TO220-2-2.  
P-TO252-3-1.  
P-TO220-3-1.  
Ideal diode for Power Factor  
1)  
Correction up to 800W  
No forward recovery  
Type  
SDP04S60  
Package  
P-TO220-3-1.  
Ordering Code  
Q67040-S4369  
Marking Pin 1  
PIN 2 PIN 3  
D04S60  
D04S60  
D04S60  
n.c.  
n.c.  
C
C
A
A
A
C
SDD04S60  
SDT04S60  
P-TO252-3-1.  
P-TO220-2-2.  
Q67040-S4368  
Q67040-S4445  
Maximum Ratings, at T = 25 °C, unless otherwise specified  
j
Parameter  
Symbol  
Value  
Unit  
I
4
A
Continuous forward current, T =100°C  
F
C
I
5.6  
12.5  
RMS forward current, f=50Hz  
FRMS  
Surge non repetitive forward current, sine halfwave I  
FSM  
T =25°C, t =10ms  
C
p
Repetitive peak forward current  
I
18  
40  
FRM  
T =150°C, T =100°C, D=0.1  
j
C
Non repetitive peak forward current  
I
FMAX  
t =10µs, T =25°C  
p
C
2
2
0.78  
600  
600  
36.5  
i t value, T =25°C, t =10ms  
i dt  
A²s  
V
C
p
Repetitive peak reverse voltage  
V
RRM  
Surge peak reverse voltage  
V
RSM  
P
W
Power dissipation, T =25°C  
tot  
C
°C  
Operating and storage temperature  
T , T  
-55... +175  
j
stg  
Page 1  
2004-02-11  

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