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SDP04S60_08 PDF预览

SDP04S60_08

更新时间: 2024-11-05 09:30:19
品牌 Logo 应用领域
英飞凌 - INFINEON 肖特基二极管
页数 文件大小 规格书
10页 792K
描述
Silicon Carbide Schottky Diode

SDP04S60_08 数据手册

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SDP04S60, SDD04S60  
SDT04S60  
thinQ!¥ SiC Schottky Diode  
Silicon Carbide Schottky Diode  
Worlds first 600V Schottky diode  
Revolutionary semiconductor  
material - Silicon Carbide  
Product Summary  
V
V
600  
13  
4
RRM  
Q
nC  
A
c
Switching behavior benchmark  
No reverse recovery  
No temperature influence on  
the switching behavior  
I
F
PG-TO220-2-2.  
P-TO252  
P-TO220  
Ideal diode for Power Factor  
1)  
Correction up to 800W  
No forward recovery  
Type  
SDP04S60  
Package  
P-TO220-3  
Ordering Code  
Q67040-S4369  
Marking Pin 1  
Pin 2  
Pin 3  
A
C
D04S60  
D04S60  
D04S60  
n.c.  
n.c.  
C
C
A
A
SDD04S60  
SDT04S60  
P-TO252-3  
PG-TO220-2-2. Q67040-S4445  
Q67040-S4368  
Maximum Ratings, at T = 25 °C, unless otherwise specified  
j
Parameter  
Symbol  
Value  
Unit  
I
4
A
Continuous forward current, T =100°C  
F
C
I
5.6  
12.5  
RMS forward current, f=50Hz  
FRMS  
Surge non repetitive forward current, sine halfwave I  
FSM  
T =25°C, t =10ms  
C
p
Repetitive peak forward current  
I
18  
40  
FRM  
T =150°C, T =100°C, D=0.1  
j
C
Non repetitive peak forward current  
I
FMAX  
t =10µs, T =25°C  
p
C
2
2
0.78  
600  
600  
36.5  
i t value, T =25°C, t =10ms  
³i dt  
A²s  
V
C
p
Repetitive peak reverse voltage  
V
RRM  
Surge peak reverse voltage  
V
RSM  
P
W
Power dissipation, T =25°C  
tot  
C
°C  
Operating and storage temperature  
T , T  
-55... +175  
j
stg  
Page 1  
2008-06-02  
Rev. 2.5  

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