5秒后页面跳转
SDP10S30 PDF预览

SDP10S30

更新时间: 2024-11-04 21:54:59
品牌 Logo 应用领域
英飞凌 - INFINEON 整流二极管肖特基二极管局域网
页数 文件大小 规格书
9页 579K
描述
Silicon Carbide Schottky Diode

SDP10S30 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:R-PSFM-T3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.73Is Samacsys:N
应用:GENERAL PURPOSE外壳连接:CATHODE
配置:SINGLE二极管元件材料:SILICON CARBIDE
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.7 V
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
最大非重复峰值正向电流:36 A元件数量:1
相数:1端子数量:3
最高工作温度:175 °C最大输出电流:10 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT APPLICABLE
最大功率耗散:65 W认证状态:Not Qualified
最大重复峰值反向电压:300 V子类别:Rectifier Diodes
表面贴装:NO技术:SCHOTTKY
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT APPLICABLEBase Number Matches:1

SDP10S30 数据手册

 浏览型号SDP10S30的Datasheet PDF文件第2页浏览型号SDP10S30的Datasheet PDF文件第3页浏览型号SDP10S30的Datasheet PDF文件第4页浏览型号SDP10S30的Datasheet PDF文件第5页浏览型号SDP10S30的Datasheet PDF文件第6页浏览型号SDP10S30的Datasheet PDF文件第7页 
SDP10S30, SDB10S30  
SDT10S30  
Preliminary data  
Silicon Carbide Schottky Diode  
Revolutionary semiconductor  
material - Silicon Carbide  
Product Summary  
V
V
300  
RRM  
Switching behavior benchmark  
No reverse recovery  
No temperature influence on  
the switching behavior  
No forward recovery  
Q
23  
nC  
A
c
I
10  
F
P-TO220-2-2.  
P-TO220-3.SMD  
P-TO220-3-1.  
Type  
SDP10S30  
Package  
P-TO220-3-1.  
Ordering Code  
Q67040-S4372  
Marking Pin 1  
PIN 2 PIN 3  
D10S30  
D10S30  
D10S30  
n.c.  
n.c.  
C
C
C
A
A
A
SDB10S30  
SDT10S30  
P-TO220-3.SMD Q67040-S4373  
P-TO220-2-2. Q67040-S4447  
Maximum Ratings,at T = 25 °C, unless otherwise specified  
j
Parameter  
Symbol  
Value  
Unit  
I
10  
14  
36  
A
Continuous forward current, T =100°C  
RMS forward current, f=50Hz  
F
C
I
FRMS  
Surge non repetitive forward current, sine halfwave I  
FSM  
T =25°C, t =10ms  
C
p
Repetitive peak forward current  
I
45  
FRM  
T =150°C, T =100°C, D=0.1  
j
C
Non repetitive peak forward current  
I
100  
FMAX  
t =10µs, T =25°C  
p
C
2
2
6.5  
300  
300  
65  
i t value, T =25°C, t =10ms  
i dt  
A²s  
V
C
p
Repetitive peak reverse voltage  
V
RRM  
RSM  
tot  
Surge peak reverse voltage  
V
P
W
Power dissipation, T =25°C  
C
°C  
Operating and storage temperature  
T , T  
-55... +175  
j
stg  
Page 1  
2001-12-04  

SDP10S30 替代型号

型号 品牌 替代类型 描述 数据表
SDT10S30 INFINEON

功能相似

Silicon Carbide Schottky Diode

与SDP10S30相关器件

型号 品牌 获取价格 描述 数据表
SDP10U20DN FAIRCHILD

获取价格

Rectifier Diode, Avalanche, 1 Phase, 2 Element, 10A, 200V V(RRM), Silicon, TO-220AB, TO-22
SDP10U20DNJ69Z FAIRCHILD

获取价格

Rectifier Diode, Avalanche, 1 Phase, 2 Element, 10A, 200V V(RRM), Silicon, TO-220AB, TO-22
SDP1100Q38B LITTELFUSE

获取价格

This new SIDACtor® Series provides overvolta
SDP1100Q38CB LITTELFUSE

获取价格

SIDACtor Protection Thyristors
SDP1100Q38CBRP LITTELFUSE

获取价格

Trigger Device
SDP117 SOLITRON

获取价格

MICROCIRCUIT, LINEAR, ADJUSTABLE VOLTAGE REGULATOR, MONOLITHIC SILICON
SDP117HV SOLITRON

获取价格

MICROCIRCUIT, LINEAR, ADJUSTABLE VOLTAGE REGULATOR, MONOLITHIC SILICON
SDP117HVNHD SOLITRON

获取价格

MICROCIRCUIT, LINEAR, ADJUSTABLE VOLTAGE REGULATOR, MONOLITHIC SILICON
SDP117HVNHG SOLITRON

获取价格

MICROCIRCUIT, LINEAR, ADJUSTABLE VOLTAGE REGULATOR, MONOLITHIC SILICON
SDP117HVTHD SOLITRON

获取价格

MICROCIRCUIT, LINEAR, ADJUSTABLE VOLTAGE REGULATOR, MONOLITHIC SILICON