Datasheet > SDP06S60_08

SDP06S60_08

更新时间： 2024-11-05 09:30:19

品牌	Logo	应用领域
英飞凌 - INFINEON		肖特基二极管
页数	文件大小	规格书
9页	638K
描述
Silicon Carbide Schottky Diode

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中文翻译

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数据手册

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SDP06S60_08 数据手册

SDP06S60

SDT06S60

thinQ!¥ SiC Schottky Diode

Silicon Carbide Schottky Diode

• Worlds first 600V Schottky diode

• Revolutionary semiconductor

material - Silicon Carbide

Product Summary

600

RRM

• Switching behavior benchmark

• No reverse recovery

• No temperature influence on

the switching behavior

PG-TO220-2-2.

P-TO220

• Ideal diode for Power Factor

Correction up to 1200W¹⁾

• No forward recovery

Type

SDP06S60

Package

P-TO220-3

Ordering Code

Q67040-S4371

Marking Pin 1

Pin 2

Pin 3

D06S60

n.c.

SDT06S60

PG-TO220-2-2. Q67040-S4446

D06S60

Maximum Ratings, at T = 25 °C, unless otherwise specified

Parameter

Symbol

Value

Unit

Continuous forward current, T =100°C

8.4

21.5

RMS forward current, f=50Hz

FRMS

Surge non repetitive forward current, sine halfwave I

FSM

T =25°C, t =10ms

Repetitive peak forward current

FRM

T =150°C, T =100°C, D=0.1

Non repetitive peak forward current

FMAX

t =10µs, T =25°C

2.3

600

57.6

i t value, T =25°C, t =10ms

³i dt

A²s

Repetitive peak reverse voltage

RRM

Surge peak reverse voltage

RSM

Power dissipation, T =25°C

tot

°C

Operating and storage temperature

T , T

-55... +175

stg

Page 1

2008-06-02

Rev. 2.4

12 3 4 5 6 7...9

中文翻译

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