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SD830D PDF预览

SD830D

更新时间: 2024-02-26 18:26:18
品牌 Logo 应用领域
DCCOM 肖特基二极管
页数 文件大小 规格书
2页 291K
描述
TECHNICAL SPECIFICATIONS OF SURFACE MOUNT SCHOTTKY BARRIER DIODE VOLTAGE RANGE - 20 to 100 Volts

SD830D 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:TO-251AB包装说明:ROHS COMPLIANT, PLASTIC PACKAGE-3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.33Is Samacsys:N
其他特性:FREE WHEELING DIODE, LOW POWER LOSS应用:EFFICIENCY
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.55 VJEDEC-95代码:TO-251AB
JESD-30 代码:R-PSIP-T3最大非重复峰值正向电流:85 A
元件数量:1相数:1
端子数量:3最高工作温度:125 °C
最低工作温度:-55 °C最大输出电流:8 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
最大重复峰值反向电压:30 V子类别:Rectifier Diodes
表面贴装:NO技术:SCHOTTKY
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

SD830D 数据手册

 浏览型号SD830D的Datasheet PDF文件第2页 
SD820D  
THRU  
DC COMPONENTS CO., LTD.  
RECTIFIER SPECIALISTS  
R
SD8100D  
TECHNICAL SPECIFICATIONS OF SURFACE MOUNT SCHOTTKY BARRIER DIODE  
VOLTAGE RANGE - 20 to 100 Volts  
CURRENT - 8.0 Amperes  
FEATURES  
* Metal to silicon rectifier majority carrier conduction  
* Low power loss, High efficiency  
* High current capability  
TO-263(D2PAK)  
* Low forward voltage drop  
* High surge capacity  
* For use in low voltage high frequency inverters, free  
wheeling, and polarity protection applications  
.190(4.8)  
.160(4.1)  
.055  
(1.4)  
Max  
.405(10.3)  
.380(9.7)  
.055(1.4)  
.045(1.2)  
MECHANICAL DATA  
6o~8o  
2
* Case: Molded plastic  
* Epoxy: UL 94V-0 rate flame retardant  
* Terminals: Solder plated, solderable per  
MIL-STD-750, Method 2026  
* Mounting position: Any  
.370(9.4)  
.330(8.4)  
.625(15.9)  
.575(14.6)  
1
2
3
6o~8o  
.110(2.8)  
.090(2.3)  
* Weight: 1.7 grams Approx.  
.070(1.8)  
.050(1.3)  
.029(0.7)  
.018(0.5)  
.055(1.4)  
.045(1.2)  
.039(1.0)  
.020(0.5)  
0o~5o  
.100  
(2.5)  
Typ  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25oC ambient temperature unless otherwise specified.  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
3
2
Dimensions in inches and (millimeters)  
SYMBOL  
UNITS  
Volts  
SD820D SD830D SD840D SD850D SD860D SD880D SD8100D  
V
V
RRM  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
20  
14  
20  
30  
21  
30  
40  
28  
40  
50  
35  
50  
60  
42  
60  
80  
56  
80  
100  
70  
RMS  
Volts  
Volts  
V
DC  
O
Maximum DC Blocking Voltage  
100  
Maximum Average Forward Rectified Current  
at TC  
=100oC  
I
8.0  
Amps  
Peak Forward Surge Current 8.3 ms single half sine-wave  
superimposed on rated load (JEDEC Method)  
I
FSM  
150  
Amps  
Volts  
Maximum Instantaneous Forward Voltage at 8.0A DC  
V
F
0.65  
0.75  
0.85  
5.0  
50  
@T  
@T  
A
A
= 25oC  
= 100oC  
Maximum DC Reverse Current at  
Rated DC Blocking Voltage  
mAmps  
I
R
Typical Thermal Resistance (Note1)  
Typical Junction Capacitance (Note 2)  
Storage Operating Temperature Range  
Rθ JA  
60  
0C/W  
pF  
0C  
CJ  
700  
T
J
, TSTG  
-55 to + 150  
Note : 1. Mounted on PC Board with 14mm2(0.013mm thick) copper pad areas.  
2. Measured at 1 MHz and applied reverse voltage of 4.0 volts.  

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