Datasheet > SD5000I-2

SD5000I-2

更新时间： 2024-09-18 21:19:11

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	51K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

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SD5000I-2 技术参数

是否Rohs认证：	不符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	5.35
最大漏极电流 (Abs) (ID)：	0.05 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	0.5 W
子类别：	FET General Purpose Power	表面贴装：	NO
Base Number Matches：	1

SD5000I-2 数据手册

SD5000I-2

Vishay Siliconix

N-Channel Lateral DMOS FET

(Available Only In Extended Hi-Rel Flow)

PRODUCT SUMMARY

V_(BR)DSMin (V)

V_GS(th)Max (V)

r_DS(on)Max (W)

C_rssMax (pF)

t_ONMax (ns)

1.5

70 @ V = 5 V

0.5

FEATURES

BENEFITS

APPLICATIONS

D Quad SPST Switch with Zener Input Protection

D Low Interelectrode Capacitance and Leakage

D Ultra-High Speed Switching—t_ON: 1 ns

D Ultra-Low Reverse Capacitance: 0.2 pF

D Low Guaranteed r_DS@ 5 V

D High-Speed System Performance

D Fast Analog Switch

D Fast Sample-and-Holds

D Pixel-Rate Switching

D Video Switch

D Low Insertion Loss at High

Frequencies

D Low Transfer Signal Loss

D Simple Driver Requirement

D Single Supply Operation

D Multiplexer

D Low Turn-On Threshold Voltage

D DAC Deglitchers

D High-Speed Driver

DESCRIPTION

The SD5000I-2 monolithic switch features four individual

double-diffused enhancement-mode MOSFETs built on a

common substrate. This bidirectional device provides low

on-resistance and low interelectrode capacitances to

minimize insertion loss and crosstalk.

SD5000I-2 utilizes lateral construction to achieve low capacitance

and ultra-fast switching speeds. For manufacturing reliability, these

devices feature poly-silicon gates protected by Zener diodes.

The SD5000I is available only in the “-2” extended hi-rel flow.

The Vishay Siliconix “-2” flow complies with the requirements

of MIL-PRF-19500 for JANTX discrete devices.

Built on Vishay Siliconix’ proprietary DMOS process, the

Dual-In-Line

SUBSTRATE

Top View

SD5000I

Applications Information—See Applications Note AN502

Document Number: 70296

S-21376—Rev. K, 12-Aug-02

www.vishay.com

9-1

12 3 4 5 6

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与SD5000I-2相关器件

型号	品牌	获取价格	描述	数据表
SD5000IJ	VISHAY	获取价格	Small Signal Field-Effect Transistor, 0.05A I(D), 20V, 4-Element, N-Channel, Silicon, Meta
SD5000IP	TEMIC	获取价格	Small Signal Field-Effect Transistor, 0.05A I(D), 20V, 4-Element, N-Channel, Silicon, Meta
SD5000IP-1	VISHAY	获取价格	Small Signal Field-Effect Transistor, 0.05A I(D), 20V, 4-Element, N-Channel, Silicon, Meta
SD5000IP-2	VISHAY	获取价格	Small Signal Field-Effect Transistor, 0.05A I(D), 20V, 4-Element, N-Channel, Silicon, Meta
SD5000IS/B16LROHSSEL1125	Linear	获取价格	Small Signal Field-Effect Transistor, 0.05A I(D), 20V, 4-Element, N-Channel, Silicon, Meta
SD5000N	MICROSS	获取价格	Quad N-Channel Enhancement Mode DMOS Lateral Switches
SD5000N	CALOGIC	获取价格	High-Speed DMOS Quad FET Analog Switch Arrays
SD5000N	Linear Systems	获取价格	QUAD N-CHANNEL LATERAL DMOS SWITCH ZENER PROTECTED
SD5000NJ	VISHAY	获取价格	Small Signal Field-Effect Transistor, 0.05A I(D), 20V, 4-Element, N-Channel, Silicon, Meta
SD5000NJ	TEMIC	获取价格	Small Signal Field-Effect Transistor, 0.05A I(D), 20V, 4-Element, N-Channel, Silicon, Meta

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