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SD5000IS/B16LROHSSEL1125 PDF预览

SD5000IS/B16LROHSSEL1125

更新时间： 2024-11-18 21:02:11
品牌 Logo 应用领域
凌特 - Linear 开关光电二极管晶体管
页数 文件大小 规格书
3页 304K
描述
Small Signal Field-Effect Transistor, 0.05A I(D), 20V, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIP-16

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SD5000IS/B16LROHSSEL1125 技术参数

生命周期：Contact Manufacturer包装说明：IN-LINE, R-PDIP-T16
Reach Compliance Code：compliant风险等级：5.64
配置：SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压：20 V
最大漏极电流 (ID)：0.05 A最大漏源导通电阻：70 Ω
FET 技术：METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss)：0.5 pF
JESD-30 代码：R-PDIP-T16元件数量：4
端子数量：16工作模式：ENHANCEMENT MODE
最高工作温度：150 °C最低工作温度：-55 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：IN-LINE极性/信道类型：N-CHANNEL
表面贴装：NO端子形式：THROUGH-HOLE
端子位置：DUAL晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

SD5000IS/B16LROHSSEL1125 数据手册

 浏览型号SD5000IS/B16LROHSSEL1125的Datasheet PDF文件第2页浏览型号SD5000IS/B16LROHSSEL1125的Datasheet PDF文件第3页 
SD5000/5001/5400/5401  
QUAD N-CHANNEL LATERAL  
DMOS SWITCH  
Over Three Decades of Quality Through Innovation  
ZENER PROTECTED  
Product Summary  
Part Number  
V(BR)DS Min (V)  
VGS(th) Max (V)  
rDS(on) Max (Ω)  
70 @ VGS = 5 V  
70 @ VGS = 5 V  
70 @ VGS = 5 V  
75 @ VGS = 5 V  
75 @ VGS = 5 V  
Crss Max (pF)  
tON Max (ns)  
SD5000I  
20  
20  
10  
20  
10  
1.5  
1.5  
1.5  
1.5  
1.5  
0.5  
0.5  
0.5  
0.5  
0.5  
2
2
2
2
2
SD5000N  
SD5001N  
SD5400CY  
SD5401CY  
Features  
Benefits  
Applications  
Quad SPST Switch with Zener Input Protection  
Low Interelectrode Capacitance and Leakage  
Ultra-High Speed Switching―tON: 1 ns  
Ultra-Low Reverse Capacitance: 0.2 pF  
Low Guaranteed rDS @5 V  
High-Speed System Performance  
Fast Analog Switch  
Low Insertion Loss at High Frequencies Fast Sample-and-Holds  
Low Transfer Signal Loss  
Simple Driver Requirement  
Single Supply Operation  
Pixel-Rate Switching  
Video Switch  
Multiplexer  
Low Turn-On Threshold Voltage  
DAC Deglitchers  
High-Speed Driver  
Description  
The SD5000/5400 series of monolithic switches features four  
individual double-diffused enhancement-mode MOSFETs built  
on a common substrate. These bidirectional devices provide low  
on-resistance and low interelectrode capacitances to minimize  
insertion loss and crosstalk.  
ultra-fast switching speeds. For manufacturing reliability, these  
devices feature poly-silicon gates protected by Zener diodes  
The SD 5000/5400 are rated to handle ±10-V analog signals,  
while the SD5001/5401 are rated for ±5-V signals.  
Built on Siliconix’ proprietary DMOS process, the SD5000/5400  
series utilizes lateral construction to achieve low capacitance and  
For similar products packaged in TO-206AF (TO-72) and TO-  
253 (SOT-143) see the SD211DE/SST211 series.  
Dual-In-Line  
Narrow Body SOIC  
D1  
S1  
D4  
NC  
G4  
S4  
S2  
SUBSTRATE  
NC  
G1  
D1  
SUBSTRATE  
G1  
S1  
G2  
D2  
D3  
G3  
S3  
D4  
G4  
S4  
S2  
S3  
G2  
NC  
D2  
G3  
NC  
D3  
Plastic: SD5000N  
SD5001N  
Sidebraze: SD5000I  
Top View  
SD5400CY  
SD5401CY  
Top View  
Linear Integrated Systems  
• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261  
Doc 20113 12/16/2016 Rev#A10 ECN# SD5000/5001/5400/5401  
123

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与SD5000IS/B16LROHSSEL1125相关器件

型号 品牌 获取价格 描述 数据表
SD5000N MICROSS

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 		Quad N-Channel Enhancement Mode DMOS Lateral Switches
SD5000N CALOGIC

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 		High-Speed DMOS Quad FET Analog Switch Arrays
SD5000N Linear Systems

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 		QUAD N-CHANNEL LATERAL DMOS SWITCH ZENER PROTECTED
SD5000NJ VISHAY

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 		Small Signal Field-Effect Transistor, 0.05A I(D), 20V, 4-Element, N-Channel, Silicon, Meta
SD5000NJ TEMIC

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 		Small Signal Field-Effect Transistor, 0.05A I(D), 20V, 4-Element, N-Channel, Silicon, Meta
SD5000NJ-1 VISHAY

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 		Small Signal Field-Effect Transistor, 0.05A I(D), 20V, 4-Element, N-Channel, Silicon, Meta
SD5000NJ-2 VISHAY

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 		Small Signal Field-Effect Transistor, 0.05A I(D), 20V, 4-Element, N-Channel, Silicon, Meta
SD5000N-LF CALOGIC

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 		Transistor
SD5000T Linear Systems

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 		QUAD N-CHANNEL LATERAL DMOS JFET SWITCH TYPICAL CHARACTERISTICS
SD5001 CALOGIC

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 		High-Speed DMOS Quad FET Analog Switch Arrays

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