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SD5001NP PDF预览

SD5001NP

更新时间: 2024-11-18 19:52:43
品牌 Logo 应用领域
威世 - VISHAY 开关晶体管
页数 文件大小 规格书
6页 174K
描述
Small Signal Field-Effect Transistor, 0.05A I(D), 10V, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

SD5001NP 技术参数

生命周期:Obsolete包装说明:IN-LINE, R-CDIP-T16
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.71
配置:SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压:10 V
最大漏极电流 (ID):0.05 A最大漏源导通电阻:70 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss):0.5 pF
JESD-30 代码:R-CDIP-T16元件数量:4
端子数量:16工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR封装形式:IN-LINE
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SD5001NP 数据手册

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