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SD113-24-21-021

更新时间： 2024-09-27 04:05:19
品牌 Logo 应用领域
ADVANCEDPHOTONIX 光电电池二极管光电二极管
页数 文件大小 规格书
1页 103K
描述
Red Enhanced Bi-Cell Silicon Photodiode

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SD113-24-21-021 技术参数

生命周期：TransferredReach Compliance Code：unknown
HTS代码：8541.40.60.50风险等级：5.52
Base Number Matches：1

SD113-24-21-021 数据手册

  
Red Enhanced Bi-Cell Silicon Photodiode  
SD 113-24-21-021  
PACKAGE DIMENSIONS INCH [mm]  
.169 [4.29]  
.157 [3.99]  
45°  
.075 [1.91]  
3X Ø.018 [0.46]  
Ø.200 [5.08]  
1
Ø.264 [6.70]  
Ø.256 [6.50]  
PIN CIRCLE  
80°  
VIEWING  
ANGLE  
2
Ø.330 [8.38]  
Ø.320 [8.13]  
3
Ø .362 [9.19]  
Ø .357 [9.07]  
.010 [0.25] MAX  
GLASS ABOVE CAP  
TOP EDGE  
3X .500 [12.7] MIN  
ANODE CELL #1  
1
2
3
CELL 1  
CELL 2  
CHIP DIMENSIONS INCH [mm]  
CASE GROUND &  
COMMON CATHODE  
.120 [3.05]  
ANODE CELL #2  
2X .048 [1.22] ACTIVE AREA  
1
SCHEMATIC  
.134 [3.40]  
2
.004 [0.10] GAP  
TO-5 PACKAGE  
2X .100 [2.54] ACTIVE AREA  
FEATURES  
DESCRIPTION  
APPLICATIONS  
• Low noise  
The SD 113-24-21-021 is a red enhanced Bi-Cell  
silicon photodiode used for nulling, centering, or  
measuring small positional changes packaged in a  
hermetic TO-5 metal package.  
• Emitter Alignment  
• Position sensing  
• Medical and Industrial  
• Red enhanced  
• High shunt resistance  
• High response  
SPECTRAL RESPONSE  
ABSOLUTE MAXIMUM RATING
(TA)= 23°C UNLESS OTHERWISE NOTED  
0.70  
0.60  
0.50  
0.40  
0.30  
0.20  
0.10  
0.00  
SYMBOL  
VBR  
PARAMETER  
MIN  
MAX  
50  
UNITS  
Reverse Voltage  
V
TSTG  
TO  
Storage Temperature  
Operating Temperature  
Soldering Temperature*  
-55  
-40  
+150  
+125  
+240  
°C  
°C  
°C  
TS  
* 1/16 inch from case for 3 seconds max.  
Wavelength (nm)  
ELECTRO-OPTICAL CHARACTERISTICS RATING
(TA)= 23°C UNLESS OTHERWISE NOTED  
SYMBOL  
CHARACTERISTIC  
Dark Current  
TEST CONDITIONS  
VR =5 V  
MIN  
TYP  
MAX  
UNITS  
nA  
ID  
0.9  
5.0  
MW  
RSH  
Shunt Resistance  
VR = 10 mV  
250  
VR = 0 V, f = 1 MHz  
VR = 10V, f = 1 MHz  
Spot Scan  
60  
13  
CJ  
CJ  
Junction Capacitance  
Junction Capacitance  
pF  
lrange  
Spectral Application Range  
350  
1100  
nm  
A/W  
l= 633nm, VR = 0 V  
l= 900nm, VR = 0 V  
I = 10 μA  
VR = 0V @ l=950nm  
RL = 50 Ω,VR = 0 V  
RL = 50 Ω,VR = 10 V  
0.32  
0.50  
0.36  
R
Responsivity  
0.55  
50  
2.5x10-14  
190  
VBR  
Breakdown Voltage  
V
NEP  
Noise Equivalent Power  
W/ √ Hz  
tr  
Response Time**  
nS  
13  
**Response time of 10% to 90% is specified at 660nm wavelength light.  
Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are  
subject to change without notice.  
Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 • www.advancedphotonix.com  
1

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