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SD1135 PDF预览

SD1135

更新时间: 2024-09-26 22:43:27
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体射频双极晶体管微波
页数 文件大小 规格书
4页 55K
描述
RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS

SD1135 技术参数

生命周期:Obsolete包装说明:POST/STUD MOUNT, O-PRPM-F4
针数:4Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.09
Is Samacsys:N最大集电极电流 (IC):2 A
集电极-发射极最大电压:16 V配置:SINGLE
最小直流电流增益 (hFE):20最高频带:ULTRA HIGH FREQUENCY BAND
JESD-30 代码:O-PRPM-F4元件数量:1
端子数量:4最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:POST/STUD MOUNT极性/信道类型:NPN
最大功率耗散 (Abs):15 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子形式:FLAT端子位置:RADIAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):470 MHzBase Number Matches:1

SD1135 数据手册

 浏览型号SD1135的Datasheet PDF文件第2页浏览型号SD1135的Datasheet PDF文件第3页浏览型号SD1135的Datasheet PDF文件第4页 
SD1135  
RF & MICROWAVE TRANSISTORS  
UHF MOBILE APPLICATIONS  
.
.
.
.
.
470 MHz  
12.5 VOLTS  
EFFICIENCY 60%  
COMMON EMITTER  
POUT 5.0 W MIN. WITH 8.5 dB GAIN  
=
.280 2L STUD (M122)  
epoxy sealed  
ORDER CODE  
BRANDING  
SD1135  
SD1135  
PIN CONNECTION  
DESCRIPTION  
The SD1135 is a 12.5 V Class C epitaxial silicon  
NPN planar transistor designed primarily for UHF  
communications. This device utilizes improved me-  
tallization to achieve infinite VSWR at rated oper-  
ating conditions.  
1. Collector  
2. Emitter  
3. Base  
4. Emitter  
°
= 25 C)  
ABSOLUTE MAXIMUM RATINGS (T  
case  
Symbol  
VCBO  
VCER  
VCES  
VEBO  
IC  
Parameter  
Value  
36  
Unit  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Device Current  
18  
V
36  
V
4.0  
2.0  
37  
V
A
PDISS  
TJ  
Power Dissipation  
W
°
°
Junction Temperature  
Storage Temperature  
+200  
C
C
TSTG  
65 to +150  
11.6  
THERMAL DATA  
RTH(j-c)  
Junction-Case Thermal Resistance  
°C/W  
1/4  
October 1992  

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