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SD103B PDF预览

SD103B

更新时间: 2024-02-20 12:24:05
品牌 Logo 应用领域
美微科 - MCC 小信号肖特基二极管
页数 文件大小 规格书
3页 123K
描述
Small Signal Schottky Diodes

SD103B 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active包装说明:R-PDSO-G2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:0.65Is Samacsys:N
其他特性:LOW POWER LOSS配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.37 VJESD-30 代码:R-PDSO-G2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:1.5 A元件数量:1
端子数量:2最高工作温度:125 °C
最低工作温度:-55 °C最大输出电流:0.35 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
最大功率耗散:0.4 W认证状态:Not Qualified
最大重复峰值反向电压:20 V最大反向恢复时间:0.01 µs
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:10Base Number Matches:1

SD103B 数据手册

 浏览型号SD103B的Datasheet PDF文件第2页浏览型号SD103B的Datasheet PDF文件第3页 
SD103A  
THRU  
SD103C  
M C C  
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Features  
l
l
l
Low Reverse Recovery Time  
Low Reverse Capacitance  
Low Forward Voltage Drop  
Small Signal  
Schottky Diodes  
l Guard Ring Construction for Transient Protection  
Mechanical Data  
l Case: DO-35, Glass  
DO-35  
l Terminals: Solderable per MIL-STD-202, Method 208  
l Polarity: Indicated by Cathode Band  
Maximum Ratings @ 25oC Unless Otherwise Specified  
D
Characteristic  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
Symbol SD103A SD103B SD103C  
VRRM  
VRWM  
VR  
40V  
28V  
30V  
20V  
14V  
A
Cathode  
Mark  
VR(RMS)  
RMS Reverse Voltage  
21V  
15A  
B
Maximum sigle cycle surge 60Hz  
sine wave  
IFSM  
D
Power Dissipation(Note 1)  
Pd  
400mW  
Thermal Resistance, Junction to  
Ambient  
R
300K/W  
125oC  
C
Junction Tmperature  
Tj  
Operation/Storage Temp. Range  
TSTG  
-55 to +150oC  
Electrical Characteristics @ 25oC Unless Otherwise Specified  
DIMENSIONS  
Charateristic  
SD103A  
Leakage SD103B  
Current SD103C  
Symbol Type Max Test Condition  
INCHES  
MIN  
---  
---  
---  
MM  
MIN  
5.0uA  
VR=30V  
DIM  
A
B
C
D
MAX  
.166  
.079  
.020  
---  
MAX  
4.2  
NOTE  
---  
---  
IR  
-----  
-----  
5.0uA VR=20V  
5.0uA VR=10V  
2.00  
.52  
---  
---  
1.000  
25.40  
0.37V  
Maximum Forward  
Voltage Drop  
VFM  
IF=20mA  
0.60V IF=200mA  
-----  
Junction Capacitance  
Cj  
50pF  
10ns  
VR=0V, f=1.0MHz  
IF=IR=50mA, recover to  
200mA/0.1IR  
-----  
Reverse Recovery Time  
trr  
Note: 1. Valid provided that electrodes are kept at ambient temperature  
www.mccsemi.com  

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