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SD103B-A PDF预览

SD103B-A

更新时间: 2024-11-01 13:13:15
品牌 Logo 应用领域
美台 - DIODES 肖特基二极管
页数 文件大小 规格书
3页 69K
描述
Rectifier Diode, Schottky, 1 Element, 0.35A, 30V V(RRM), Silicon, DO-35, ROHS COMPLIANT, GLASS PACKAGE-2

SD103B-A 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:DO-35包装说明:ROHS COMPLIANT, GLASS PACKAGE-2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.1Is Samacsys:N
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.37 VJEDEC-95代码:DO-35
JESD-30 代码:O-LALF-W2JESD-609代码:e2
湿度敏感等级:1最大非重复峰值正向电流:15 A
元件数量:1端子数量:2
最高工作温度:175 °C最低工作温度:-55 °C
最大输出电流:0.35 A封装主体材料:GLASS
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):260最大功率耗散:0.4 W
认证状态:Not Qualified最大重复峰值反向电压:30 V
最大反向恢复时间:0.01 µs子类别:Rectifier Diodes
表面贴装:NO技术:SCHOTTKY
端子面层:Tin/Silver (Sn/Ag)端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:40
Base Number Matches:1

SD103B-A 数据手册

 浏览型号SD103B-A的Datasheet PDF文件第2页浏览型号SD103B-A的Datasheet PDF文件第3页 
SD103A - SD103C  
SCHOTTKY BARRIER DIODE  
Features  
·
·
Low Forward Voltage Drop  
A
B
A
Guard Ring Construction for Transient  
Protection  
·
·
Low Reverse Recovery Time  
Low Reverse Capacitance  
C
D
Mechanical Data  
DO-35  
Min  
25.40  
¾
·
·
Case: DO-35, Glass  
Dim  
A
Max  
Leads: Solderable per MIL-STD-202,  
Method 208  
¾
B
4.00  
0.60  
2.00  
·
·
·
Marking: Type Number  
Polarity: Cathode Band  
Weight: 0.13 grams (approx.)  
C
¾
D
¾
All Dimensions in mm  
@ TA = 25°C unless otherwise specified  
Maximum Ratings  
Characteristic  
Symbol  
SD103A  
40  
SD103B  
SD103C  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
V
30  
20  
14  
VR(RMS)  
IFM  
V
mA  
A
RMS Reverse Voltage  
28  
21  
350  
1.0  
Forward Continuous Current  
Repetitive Peak Forward Current  
IFRM  
@ t £ 1.0s  
Non-Repetitive Peak Forward Surge Current  
8.3 ms Half Sine Wave  
IFSM  
15  
A
Pd  
RqJA  
Tj  
Power Dissipation  
400  
300  
mW  
K/W  
°C  
Thermal Resistance, Junction to Ambient Air  
Operating Junction Temeperature  
Storage Temperature Range  
125  
TSTG  
-55 to +150  
°C  
@ TA = 25°C unless otherwise specified  
Electrical Characteristics  
Characteristic  
Symbol  
Min  
Typ  
MaxUnit  
Test  
Condition  
Reverse Breakdown Voltage  
SD103A  
SD103B  
SD103C  
40  
30  
20  
V(BR)R  
IRS = 100mA (pulsed)  
¾
¾
V
V
IF = 20mA  
IF = 200mA  
0.37  
0.60  
VFM  
Maximum Forward Voltage Drop  
Maximum Peak Reverse Current  
¾
¾
¾
VR = 30V  
SD103A  
SD103B  
SD103C  
IRM  
V
R = 20V  
R = 10V  
¾
5.0  
mA  
V
VR = 0V, f = 1.0MHz  
Cj  
trr  
Junction Capacitance  
¾
¾
50  
10  
¾
¾
pF  
ns  
IF = IR = 50mA to 200mA,  
Irr = 0.1 x IR, RL = 100W  
Reverse Recovery Time  
DS11009 Rev. 11 - 2  
1 of 3  
SD103A - SD103C  

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