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SD103BW PDF预览

SD103BW

更新时间: 2024-02-07 12:18:22
品牌 Logo 应用领域
美微科 - MCC 小信号肖特基二极管
页数 文件大小 规格书
3页 166K
描述
400mW Small Signal Schottky Diode 20 to 40 Volts

SD103BW 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active包装说明:R-PDSO-G2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:0.65Is Samacsys:N
其他特性:LOW POWER LOSS配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.37 VJESD-30 代码:R-PDSO-G2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:1.5 A元件数量:1
端子数量:2最高工作温度:125 °C
最低工作温度:-55 °C最大输出电流:0.35 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
最大功率耗散:0.4 W认证状态:Not Qualified
最大重复峰值反向电压:20 V最大反向恢复时间:0.01 µs
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:10Base Number Matches:1

SD103BW 数据手册

 浏览型号SD103BW的Datasheet PDF文件第2页浏览型号SD103BW的Datasheet PDF文件第3页 
M C C  
SD103AW  
THRU  
SD103CW  
TM  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
Micro Commercial Components  
Features  
·
Lead Free Finish/RoHS Compliant("P" Suffix  
designates RoHS Compliant. See ordering information)  
Guard Ring Protection  
Low Forward Voltage Drop  
400mW Small Signal  
Schottky Diode  
20 to 40 Volts  
Low Power Loss For High Efficiency  
SD103AW: S4  
SD103BW: S5  
SD103CW: S6  
Device Marking Code:  
SOD-123  
Maximum Ratings  
Epoxy meets UL 94 V-0 flammability rating  
A
·
B
·
Moisture Sensitivity Level 1  
Operating Temperature: -55R to +125R  
C
E
Storage Temperature: -55R to +150R  
Maximum Thermal Resistance; 300R/W Junction to Ambient  
Maximum  
Recurrent  
Maximum DC  
MCC  
Maximum  
H
Blocking  
Voltage  
D
Part Number Peak Reverse RMS Voltage  
Voltage  
SD103AW  
SD103BW  
SD103CW  
40V  
30V  
20V  
28V  
21V  
14V  
40V  
30V  
20V  
J
G
DIMENSIONS  
DIM  
INCHES  
MM  
Electrical Characteristics @ 25R Unless Otherwise Specified  
NOTE  
MIN  
.140  
.100  
.055  
---  
.012  
.006  
---  
MAX  
.152  
MIN  
3.55  
2.55  
1.40  
---  
0.30  
0.15  
---  
MAX  
3.85  
2.85  
1.80  
1.35  
0.78  
---  
A
B
C
D
E
G
H
J
Average Forward  
IF(AV)  
IFSM  
PD  
350mA Note 1  
t!1.0s  
400mW Note 1  
.112  
.071  
.053  
.031  
---  
Current  
Peak Forward Surge  
Current  
1.5A  
.010  
.006  
0.25  
0.15  
Maximum Power  
Dissipation  
---  
---  
Maximum (Note2)  
Instantaneous  
Forward Voltage  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
Typical Junction  
Capacitance  
Typical Reverse  
Recovery Time  
0.37V  
0.60V  
I
FM = 20mA  
VF  
SUGGESTED SOLDER  
PAD LAYOUT  
IFM = 200mA  
0.093  
VR = 30V (AW)  
VR = 20V (BW)  
VR = 10V (CW)  
IR  
5.0µA  
0.048”  
Measured at  
Cj  
trr  
50pF  
10ns  
1.0MHz, VR=0V  
IF = IR =200mA  
Irr=0.1×IR RL=100  
0.036”  
Note: 1.Valid provided that electrodes are kept at ambient  
Temperature  
2.Pulse test: Pulse width 300 µsec, Duty cycle 2%  
www.mccsemi.com  
1 of 3  
Revision: A  
2011/01/01  

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