Datasheet > SD103BW

SD103BW

更新时间： 2023-12-06 20:03:22

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	1720K
描述
SOD-123

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中文翻译

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数据手册

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SD103BW 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOD-123 Plastic-Encapsulate Diodes

Schottky Barrier Diode

SD103AW-SD103CW

SOD-123

FEATURES

Low Forward Voltage Drop

Guard Ring Construction for Transient Protection

Negligible Reverse Recovery Time

Low Capacitance

MARKING:

SD103AW:S4

SD103BW:S5

SD103CW:S6

The marking bar indicates the cathode

Solid dot = Green molding compound device.

MAXIMUM RATINGS ( T_a=25℃ unless otherwise noted )

Value

Symbol

Parameter

Unit

SD103AW SD103BW SD103CW

V_RRM

V_RWM

V_R(RMS)

I_FM

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

RMS Reverse Voltage

350

Forward Continuous Current

I_FSM

P_D

Non-repetitive Peak Forward Surge Current@t= 8.3ms

Power Dissipation

400

250

℃/W

℃

R_ΘJA

T_j

Thermal Resistance from Junction to Ambient

Operating Junction Temperature Range

Storage Temperature Range

-40 ~ +125

T_stg

-55 ~ +150

℃

ELECTRICAL CHARACTERISTICS(T_a=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

SD103AW

Min

Typ

Max

Unit

I_R=100μA

Reverse voltage

V_(BR)

SD103BW

SD103CW

SD103AW

SD103BW

SD103CW

V_R=30V

V_R=20V

V_R=10V

I_F=20mA

Reverse current

Forward voltage

I_R

μA

0.37

0.6

V_F

I_F=200mA

Total capacitance

C_tot

t_rr

V_R=0V,f=1MHz

Reverse recovery time

I_F= I_R=200mA, I_rr=0.1×I_R, R_L=100Ω

www.jscj-elec.com

Rev. - 2.1

12 3 4

中文翻译

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