SD103B{TAPE-REEL}

更新时间： 2024-01-25 23:53:53

品牌	Logo	应用领域
美台 - DIODES		肖特基二极管
页数	文件大小	规格书
3页	69K
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SD103B{TAPE-REEL} 数据手册

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SD103A - SD103C

SCHOTTKY BARRIER DIODE

Features

Low Forward Voltage Drop

Guard Ring Construction for Transient

Protection

Low Reverse Recovery Time

Low Reverse Capacitance

Mechanical Data

DO-35

Min

25.40

Case: DO-35, Glass

Dim

Max

Leads: Solderable per MIL-STD-202,

Method 208

4.00

0.60

2.00

Marking: Type Number

Polarity: Cathode Band

Weight: 0.13 grams (approx.)

All Dimensions in mm

@ T_A= 25°C unless otherwise specified

Maximum Ratings

Characteristic

Symbol

SD103A

SD103B

SD103C

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V_RRM

V_RWM

V_R

V_R(RMS)

I_FM

RMS Reverse Voltage

350

1.0

Forward Continuous Current

Repetitive Peak Forward Current

I_FRM

@ t £ 1.0s

Non-Repetitive Peak Forward Surge Current

8.3 ms Half Sine Wave

I_FSM

P_d

R_qJA

T_j

Power Dissipation

400

300

K/W

°C

Thermal Resistance, Junction to Ambient Air

Operating Junction Temeperature

Storage Temperature Range

125

T_STG

-55 to +150

°C

@ T_A= 25°C unless otherwise specified

Electrical Characteristics

Characteristic

Symbol

Min

Typ

MaxUnit

Test

Condition

Reverse Breakdown Voltage

SD103A

SD103B

SD103C

V_(BR)R

I_RS= 100mA (pulsed)

I_F= 20mA

I_F= 200mA

0.37

0.60

V_FM

Maximum Forward Voltage Drop

Maximum Peak Reverse Current

V_R= 30V

SD103A

SD103B

SD103C

I_RM

_R= 20V

_R= 10V

5.0

V_R= 0V, f = 1.0MHz

C_j

t_rr

Junction Capacitance

I_F= I_R= 50mA to 200mA,

I_rr= 0.1 x I_R, R_L= 100W

Reverse Recovery Time

DS11009 Rev. 11 - 2

1 of 3

SD103A - SD103C

12 3

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