Datasheet > SD103B

SD103B

更新时间： 2024-09-26 06:10:35

品牌	Logo	应用领域
商朗 - LUNSURE		小信号肖特基二极管
页数	文件大小	规格书
3页	85K
描述
Small signal schottky diodes

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中文翻译

获取价格

数据手册

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SD103B 数据手册

SD103A

THRU

SD103C

Shanghai Lunsure Electronic

Technology Co.,Ltd

Tel:0086-21-37185008

Fax:0086-21-57152769

Features

Low Reverse Recovery Time

Small Signal

Low Reverse Capacitance

Low Forward Voltage Drop

Schottky Diodes

l Guard Ring Construction for Transient Protection

Mechanical Data

l Case: DO-35, Glass

DO-35

l Terminals: Solderable per MIL-STD-202, Method 208

l Polarity: Indicated by Cathode Band

Maximum Ratings @ 25^oC Unless Otherwise Specified

Characteristic

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

Symbol SD103A SD103B SD103C

V^RRM

VRWM

V_R

40V

28V

30V

20V

14V

Cathode

Mark

V_R(RMS)

RMS Reverse Voltage

21V

15A

Maximum sigle cycle surge 60Hz

sine wave

IFSM

Power Dissipation(Note 1)

400mW

Thermal Resistance, Junction to

Ambient

300K/W

125^oC

Junction Tmperature

T^j

Operation/Storage Temp. Range

TSTG

-55 to +150^oC

Electrical Characteristics @ 25^oC Unless Otherwise Specified

DIMENSIONS

Charateristic

SD103A

Leakage SD103B

Current SD103C

Symbol Type Max Test Condition

INCHES

MIN

---

MIN

5.0uA

VR=30V

DIM

MAX

.166

.079

.020

---

MAX

4.2

NOTE

---

I_R

-----

5.0uA V_R=20V

5.0uA VR=10V

2.00

.52

---

1.000

25.40

0.37V

Maximum Forward

Voltage Drop

VFM

IF=20mA

0.60V I_F=200mA

-----

Junction Capacitance

50pF

10ns

VR=0V, f=1.0MHz

IF=IR=50mA, recover to

200mA/0.1IR

-----

Reverse Recovery Time

trr

Note: 1. Valid provided that electrodes are kept at ambient temperature

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