Datasheet > SCT4062KWA

SCT4062KWA

更新时间： 2024-09-19 17:00:55

品牌	Logo	应用领域
罗姆 - ROHM		/
页数	文件大小	规格书
17页	1567K
描述
SCT4062KWA is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, lo

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SCT4062KWA 数据手册

SCT4062KWA

N-channel SiC power MOSFET

Datasheet

lOutline

TO-263-7LA

V_DSS

1200V

62mΩ

24A

(Tab)

R_DS(on)(Typ.)

I_D

P_D

93W

(1) (2)(3)(4)(5)(6) (7)

● Features

lInner circuit

1) Low on-resistance

2) Fast switching speed

3) Fast reverse recovery

4) Easy to parallel

(Tab)

(1) Gate

(2) Driver Source

*1 (3)~(7) Pow er Source

(Tab) Drain

(1)

(2)

*1 Body Diode

(3)~(7)

5) Simple to drive

Please note Driver Source and Power Source are

not exchangeable. Their exchange might lead to

malfunction.

6) Pb-free lead plating ; RoHS compliant

7) Wide creepage distance = min.4.7 mm

lPackaging specifications

Embossed tape

Packing

● Application

・Solar inverters

Reel size (mm)

Tape width (mm)

Basic ordering unit (pcs)

Taping code

330

・DC/DC converters

・Switch mode power supplies

・Induction heating

・Motor drives

1000

Type

Marking

SCT4062KWA

lAbsolute maximum ratings (T_vj= 25°C unless otherwise specified.)

Parameter

Symbol

V_DSS

Value

1200

Unit

Drain - source voltage

T_c= 25°C

Continuous drain

and source current

V_GS= V_{GS_on}

I_D, I_S

T_c= 100°C

V_GS= V_{GS_on}T_c= 25°C

Pulsed drain current

I_D,pulse

*1,*3

Body diode pulsed forward current

Body diode surge forward current

Gate - source voltage (DC)

I_S,pulse

T_c= 25°C

V_GS= 0 V

*1,*4

I_S,pulse

V_{GSS_DC}

-4 to +21

-4 to +23

+15 to +18

Gate - source surge voltage (t_surge< 300ns)

Recommended turn-on gate - source drive voltage

Recommended turn-off gate - source drive voltage

Virtual junction temperature

V_{GSS_surge}

V_{GS_on}

V_{GS_off}

T_vj

175

°C

T_stg

Range of storage temperature

-40 to +175

www.rohm.com

TSZ22111・14・001

TSQ50253-SCT4062KWA

26.Jul.2023 - Rev.001

1/15

12 3 4 5 6 7...17

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