Datasheet > SCT4062KWAHR

SCT4062KWAHR

更新时间： 2024-03-03 10:09:59

品牌	Logo	应用领域
罗姆 - ROHM		/
页数	文件大小	规格书
17页	1848K
描述
AEC-Q101 qualified automotive grade product. SCT4062KWAHR is an SiC (Silicon Carbide) trench MOSFE

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SCT4062KWAHR 数据手册

SCT4062KWAHR

Automotive Grade N-channel SiC power MOSFET

Datasheet

lOutline

TO-263-7LA

(Tab)

V_DSS

1200V

62mΩ

24A

R_DS(on)(Typ.)

I_D

P_D

93W

(1) (2)(3)(4)(5)(6) (7)

lInner circuit

● Features

(Tab)

1) Qualified to AEC-Q101

2) Low on-resistance

3) Fast switching speed

4) Fast reverse recovery

5) Easy to parallel

(1) Gate

(2) Driver Source

*1 (3)~(7) Pow er Source

(Tab) Drain

(1)

(2)

*1 Body Diode

(3)~(7)

Please note Driver Source and Power Source are

not exchangeable. Their exchange might lead to

malfunction.

6) Simple to drive

7) Pb-free lead plating ; RoHS compliant

8) Wide creepage distance = min.4.7mm

● Application

lPackaging specifications

Embossed tape

Packing

Reel size (mm)

Tape width (mm)

Basic ordering unit (pcs)

Taping code

330

・Automobile

1000

・Switch mode power supplies

Type

Marking

SCT4062KWA

lAbsolute maximum ratings (T_vj= 25°C unless otherwise specified.)

Parameter

Symbol

V_DSS

Value

1200

Unit

Drain - source voltage

T_c= 25°C

Continuous drain

and source current

V_GS= V_{GS_on}

I_D, I_S

T_c= 100°C

V_GS= V_{GS_on}T_c= 25°C

Pulsed drain current

I_D,pulse

*1,*3

Body diode pulsed forward current

Body diode surge forward current

Gate - source voltage (DC)

I_S,pulse

T_c= 25°C

V_GS= 0 V

*1,*4

I_S,pulse

V_{GSS_DC}

-4 to +21

-4 to +23

+15 to +18

Gate - source surge voltage (t_surge< 300ns)

Recommended turn-on gate - source drive voltage

Recommended turn-off gate - source drive voltage

Virtual junction temperature

V_{GSS_surge}

V_{GS_on}

V_{GS_off}

T_vj

175

°C

T_stg

Range of storage temperature

-40 to +175

www.rohm.com

TSQ50253-SCT4062KWAHR

14.Apr.2023 - Rev.002

TSZ22111・14・001

1/15

12 3 4 5 6 7...17

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