Datasheet > SCS220AE

SCS220AE

更新时间： 2024-11-05 01:18:11

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罗姆 - ROHM		/
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描述
SiC Schottky Barrier Diode

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SCS220AE 数据手册

SCS220AE

Datasheet

SiC Schottky Barrier Diode

Outline

TO-247

V_R

I_F

650V

20A

Q_C

31nC

(3)

(2)

(1)

Features

1) Shorter recovery time

Inner circuit

2) Reduced temperature dependence

3) High-speed switching possible

(1) N/C

(2) Cathode

(3) Anode

(1) (2) (3)

Packaging specifications

Packaging

Tube

Reel size (mm)

Construction

Tape width (mm)

Type

Silicon carbide epitaxial planer Shottoky Diode

Basic ordering unit (pcs)

Packing code

Marking

SCS220AE

Absolute maximum ratings (T_j= 25°C)

Parameter

Symbol

V_RM

V_R

Value

650

Unit

Reverse voltage (repetitive peak)

Reverse voltage (DC)

650

20*¹

71*²

I_F

Continuous forward current

260*³

56*⁴

I_FSM

Surge no repetitive forward current

76*⁵

I_FRM

P_D

Repetitive peak forward current

Total power disspation

130*⁶

°C

T_j

Junction temperature

175

T_stg

Range of storage temperature

55 to 175

*1 T_c=128°C *2 PW=8.3ms sinusoidal, T_j=25°C *3 PW=10s square, T_j=25°C

*4 PW=8.3ms sinusoidal, T_j=150°C *5 T_c=100°C, T_j=150°C, Duty cycle=10% *6 Tc=25°C

www.rohm.com

2017.06 - Rev.C

1/4

12 3 4 5 6

中文翻译

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