Datasheet > SCS220KGHR_17

SCS220KGHR_17

更新时间： 2024-11-05 01:18:11

品牌	Logo	应用领域
罗姆 - ROHM		/
页数	文件大小	规格书
6页	951K
描述
SiC Schottky Barrier Diode

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中文翻译

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数据手册

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SCS220KGHR_17 数据手册

SCS220KGHR

Datasheet

SiC Schottky Barrier Diode

AEC-Q101 Qualified

(1)

TO-220AC

V_R

I_F

1200V

20A

Q_C

65nC

(3)

(2)

Features

1) Shorter recovery time

Inner circuit

(1)

2) Reduced temperature dependence

3) High-speed switching possible

(1) Cathode

(2) Cathode

(3) Anode

(2)

(3)

Packaging specifications

Packaging

Tube

Reel size (mm)

Construction

Tape width (mm)

Type

Silicon carbide epitaxial planer Schottky Diode

Basic ordering unit (pcs)

Packing code

Marking

SCS220KG

Absolute maximum ratings (Tj = 25°C)

Parameter

Symbol

V_RM

V_R

Value

1200

Unit

Reverse voltage (repetitive peak)

Reverse voltage (DC)

20*¹

82*²

I_F

Continuous forward current

310*³

62*⁴

I_FSM

Surge no repetitive forward current

77*⁵

I_FRM

P_D

Repetitive peak forward current

Total power disspation

210*⁶

°C

Junction temperature

175

Range of storage temperature

Tstg

55 to 175

*1 Tc=133°C *2 PW=8.3ms sinusoidal, Tj=25°C *3 PW=10s square, Tj=25°C

*4 PW=8.3ms sinusoidal, Tj=150°C *5 Tc=100°C, Tj=150°C, Duty cycle=10% *6 Tc=25°C

www.rohm.com

2017.06 - Rev.C

1/4

12 3 4 5 6

中文翻译

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