Datasheet > SCS220AE2

SCS220AE2

更新时间： 2024-11-05 01:11:03

品牌	Logo	应用领域
罗姆 - ROHM		/
页数	文件大小	规格书
6页	293K
描述
SiC Schottky Barrier Diode

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SCS220AE2 数据手册

SCS220AE2

SiC Schottky Barrier Diode

Datasheet

lOutline

TO-247

V_R

I_F

650V

10A/20A*

Q_C

15nC

(3)

*(Per leg / Both legs)

(2)

(1)

lFeatures

lInner circuit

1) Shorter recovery time

2) Reduced temperature dependence

3) High-speed switching possible

(1) Anode

(2) Cathode

(3) Anode

(1) (2) (3)

lPackaging specifications

Packaging

Tube

Reel size (mm)

lConstruction

Tape width (mm)

Type

Silicon carbide epitaxial planer type

Basic ordering unit (pcs)

Taping code

Marking

SCS220AE2

lAbsolute maximum ratings (Tj = 25°C)

Parameter

Symbol

V_RM

V_R

Value

650

Unit

Reverse voltage (repetitive peak)

Reverse voltage (DC)

650

Continuous forward current^*7

10/20*¹

40/80*²

I_F

Surge no repetitive forward current^*7

150/300*³

31/63*⁴

I_FSM

Repetitive peak forward current^*7

Total power disspation^*7

42/85*⁵

I_FRM

P_D

83/160*⁶

°C

Junction temperature

175

Range of storage temperature

Tstg

-55 to +175

*1 Tc=137°C/Tc=137°C *2 PW=8.3ms sinusoidal, Tj=25°C *3 PW=10ms square, Tj=25°C

*4 PW=8.3ms sinusoidal, Tj=150°C *5 Tc=100°C, Tj=150°C, Duty cycle=10%

*6 Tc=25°C *7 Per leg / Both legs

www.rohm.com

2013.04 - Rev.B

1/5

12 3 4 5 6

中文翻译

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