Datasheet > SCS220AE2HR

SCS220AE2HR

更新时间： 2024-11-05 01:18:11

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罗姆 - ROHM		/
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6页	916K
描述
SiC Schottky Barrier Diode

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SCS220AE2HR 数据手册

SCS220AE2HR

Datasheet

SiC Schottky Barrier Diode

AEC-Q101 Qualified

TO-247

V_R

I_F

650V

10A/20A*

Q_C

15nC

(3)

*(Per leg / Both legs)

(2)

(1)

Features

Inner circuit

1) Shorter recovery time

2) Reduced temperature dependence

3) High-speed switching possible

(1) Anode

(2) Cathode

(3) Anode

(1) (2) (3)

Packaging specifications

Packaging

Tube

Reel size (mm)

Construction

Tape width (mm)

Type

Silicon carbide epitaxial planer schottky diode

Basic ordering unit (pcs)

Packing code

Marking

SCS220AE2

Absolute maximum ratings (Tj = 25°C)

Parameter

Symbol

V_RM

V_R

Value

650

Unit

Reverse voltage (repetitive peak)

Reverse voltage (DC)

650

Continuous forward current^*7

10/20*¹

40/80*²

I_F

Surge no repetitive forward current^*7

150/300*³

31/63*⁴

I_FSM

Repetitive peak forward current^*7

Total power disspation^*7

42/85*⁵

I_FRM

P_D

83/160*⁶

°C

Junction temperature

175

Range of storage temperature

Tstg

55 to 175

*1 Tc=137°C/Tc=137°C *2 PW=8.3ms sinusoidal, Tj=25°C *3 PW=10s square, Tj=25°C

*4 PW=8.3ms sinusoidal, Tj=150°C *5 Tc=100°C, Tj=150°C, Duty cycle=10%

*6 Tc=25°C *7 Per leg / Both legs

www.rohm.com

2017.06 - Rev.C

1/4

12 3 4 5 6

中文翻译

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