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SC1205CS

更新时间： 2024-10-25 22:43:27

品牌	Logo	应用领域
商升特 - SEMTECH		驱动器
页数	文件大小	规格书
12页	130K
描述
HIGH SPEED SYNCHRONOUS POWER MOSFET DRIVER

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中文翻译

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技术参数
数据手册

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SC1205CS 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
零件包装代码：	SOIC	包装说明：	SOP, SOP8,.25
针数：	8	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8542.39.00.01
风险等级：	5.8	高边驱动器：	YES
接口集成电路类型：	HALF BRIDGE BASED MOSFET DRIVER	JESD-30 代码：	R-PDSO-G8
长度：	4.9 mm	功能数量：	1
端子数量：	8	标称输出峰值电流：	2 A
封装主体材料：	PLASTIC/EPOXY	封装代码：	SOP
封装等效代码：	SOP8,.25	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	240
电源：	5 V	认证状态：	Not Qualified
座面最大高度：	1.75 mm	子类别：	MOSFET Drivers
最大供电电压：	6 V	最小供电电压：	4.15 V
标称供电电压：	5 V	表面贴装：	YES
技术：	CMOS	端子形式：	GULL WING
端子节距：	1.27 mm	端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	断开时间：	0.024 µs
接通时间：	0.032 µs	宽度：	3.9 mm
Base Number Matches：	1

SC1205CS 数据手册

HIGH SPEED SYNCHRONOUS POWER

MOSFET DRIVER

SC1205

PRELIMINARY - December 7, 1999

TEL:805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com

DESCRIPTION

FEATURES

The SC1205 is a cost effective Dual MOSFET Driver

designed for switching High and Low side Power

MOSFETs. Each driver is capable of driving a

3000pF load in 20ns rise/fall time and has a 20ns max

propagation delay from input transition to the gate of

the power FET’s. An internal Overlap Protection Cir-

cuit prevents shoot-through from Vin to GND in the

main switching and synchronous MOSFET’s. The

Overlap Protection circuit ensures the Bottom FET

does not turn on until the Top FET source has reached

a voltage low enough to prevent cross-conduction.

•

Fast rise and fall times (15ns typical with 3000pf

load)

2Amp peak drive current

14ns max Propagation delay (BG going low)

Adaptive Non-overlapping Gate Drives provide

shoot-through protection

Floating top drive switches up to 25V

Under-Voltage lock-out

•

Overtemperature protection

Less than 10uA supply current when EN is low

Low cost

The high current drive capability (2A peak) allows fast

switching, thus reducing switching losses at high

(1MHz) PWM frequencies. The high voltage CMOS

process allows operation from 5-25 Volts at top MOS-

FET drain, thus making SC1205 suitable for battery

powered applications. Connecting Enable pin (EN) to

logic low shuts down both drives and reduces operat-

ing current to less than 10uA.

APPLICATIONS

•

High Density sunchronous power supplies

Motor Drives/Class-D amps/Half bridge drivers

High frequency (to 1.2 MHz) operation allows use

of small inductors and low cost caps in place of

electrolytics

•

Portable computers

Battery powered applications

An Under-Voltage-Lock-Out circuit is included to guar-

antee that both driver outputs are low when the 5V

logic level is less than or equal to 4.4V (typ) at supply

ramp up (4.35V at supply ramp down). An Internal

temperature sensor shuts down all drives in the event

of overtemperature. SC1205 is fabricated utilizing

CMOS technology for low quiescent current. The

SC1205 is offered in a standard SO-8 package.

ORDERING INFORMATION

DEVICE⁽¹⁾

PACKAGE

TEMP. RANGE (T_J)

SC1205CS

SO-8

0 - 125°C

Note:

(1) Add suffix ‘TR’ for tape and reel.

PIN CONFIGURATION

BLOCK DIAGRAM

Top View

(SO-8)

652 MITCHELL ROAD NEWBURY PARK CA 91320

12 3 4 5 6 7...12

中文翻译

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与SC1205CS相关器件

型号	品牌	获取价格	描述	数据表
SC1205CS.TR	SEMTECH	获取价格	High Speed Synchronous Power MOSFET Driver
SC1205CSTR	SEMTECH	获取价格	Half Bridge Based MOSFET Driver, 3A, CMOS, PDSO8, MS-012AA, SOP-8
SC1205CSTRT	SEMTECH	获取价格	High Speed Synchronous Power MOSFET Driver
SC1205H	SEMTECH	获取价格	high speed syncronous power mosfet driver
SC1205HSTR	SEMTECH	获取价格	high speed syncronous power mosfet driver
SC1206	BEL	获取价格	SMD POWER INDUCTORS Open frame construction
SC1206	SOCAY	获取价格	Surface Mount 2-Electrode Gas Discharge Tube (GDT)
SC1206-100	BEL	获取价格	SMD POWER INDUCTORS Open frame construction
SC1206-101	BEL	获取价格	SMD POWER INDUCTORS Open frame construction
SC1206-150ASMD	SOCAY	获取价格	Surface Mount 2-Electrode Gas Discharge Tube (GDT)

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