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SC1205H

更新时间： 2024-10-26 04:05:35

品牌	Logo	应用领域
商升特 - SEMTECH		驱动器
页数	文件大小	规格书
13页	228K
描述
high speed syncronous power mosfet driver

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SC1205H 数据手册

SC1205H

High Speed Synchronous Power

MOS!ET Driver

POWER MANAGEMENT

PRELIMINARY

ꢀeatures

Description

The SC1205H is a cost effective, High Drive Voltage,

Dual MOSꢀET Driver designed for switching High and Low

side Power MOSꢀETs. Each driver is capable of Ultra-

fast rise/fall times as well as a 20ns max propagation

delay from input transition to the gate of the power ꢀETs.

An internal Overlap Protection circuit prevents shoot-

through from Vin to GND in the main and synchronous

MOSꢀETs. The Adaptive Overlap Protection circuit en-

sures the Bottom ꢀET does not turn on until the Top ꢀET

source has reached a voltage low enough to prevent

cross-conduction.

u Higher efficiency (>90%)

u ꢀast rise and fall times (15ns typical with 3000pf

load)

u Higher gate drive voltage (8V) for optimum

MOSꢀET RDS_ON at minimum switching loss

u Ultra-low (<20ns) propagation delay (BG going low)

u 5 Amp peak drive current

u Adaptive non-overlapping gate drives provide

shoot-through protection

u ꢀloating top drive switches up to 18V

u Under-voltage lock-out

u Over-temperature shutdown

Higher gate voltage drive capability of 8V (top and

bottom) optimally reduces Rds_on of power MOSꢀETs

without excessive driver and ꢀET switching losses. The

high current drive capability (5A peak) allows fast switch-

ing, thus reducing switching losses at high (up to 1MHz)

frequencies without causing thermal stress on the driver.

u Less than 10µA supply current when EN is low

u Low cost

Applications

u Intel Pentium^TMpower supplies

u AMD Athlon^TMand K8^TMpower supplies

u High efficiency portable and notebook computers

u Battery powered applications

The high voltage CMOS process allows operation from 5-

18 Volts at top MOSꢀET drain, thus making SC1205H

suitable for battery powered applications. Connecting

Enable pin (EN) to logic low shuts down both drives and

reduces operating current to less than 10µA.

u High frequency (to 1.0 MHz) operation allows use

of small inductors and low cost caps in place of

electrolytics

An under-voltage-lock-out and overtemperature shut-

down feature is included to guarantee proper and safe

operation. The SC1205H is offered in a standard SO-8

package.

Typical Application Circuit

2.5m

Vin 5-12V

2200uf

10u,CER

+8V

10nf

70N03

BST

VID4

VCC

BGOUT

OC+

+8V

VID3

DRN

70N03

VID2

VID1

OUT1

OUT2

OC-

SC1205H

GND

VID0

1.5V,40A

ERROUT

70N03

BST

UVLO

GND

+8V

RREF

DRN

70N03

Rref

SC2422B

SC1205H

GND

www.semtech.com

Revision 2, June 2002

12 3 4 5 6 7...13

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与SC1205H相关器件

型号	品牌	获取价格	描述	数据表
SC1205HSTR	SEMTECH	获取价格	high speed syncronous power mosfet driver
SC1206	BEL	获取价格	SMD POWER INDUCTORS Open frame construction
SC1206	SOCAY	获取价格	Surface Mount 2-Electrode Gas Discharge Tube (GDT)
SC1206-100	BEL	获取价格	SMD POWER INDUCTORS Open frame construction
SC1206-101	BEL	获取价格	SMD POWER INDUCTORS Open frame construction
SC1206-150ASMD	SOCAY	获取价格	Surface Mount 2-Electrode Gas Discharge Tube (GDT)
SC1206-1R0	BEL	获取价格	SMD POWER INDUCTORS Open frame construction
SC1206-200ASMD	SOCAY	获取价格	Surface Mount 2-Electrode Gas Discharge Tube (GDT)
SC1206-220	BEL	获取价格	SMD POWER INDUCTORS Open frame construction
SC1206-230ASMD	SOCAY	获取价格	Surface Mount 2-Electrode Gas Discharge Tube (GDT)

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