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SC1205HSTR PDF预览

SC1205HSTR

更新时间： 2024-10-26 04:05:35
品牌 Logo 应用领域
商升特 - SEMTECH 驱动器MOSFET驱动器驱动程序和接口接口集成电路光电二极管信息通信管理
页数 文件大小 规格书
13页 228K
描述
high speed syncronous power mosfet driver

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中文翻译

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SC1205HSTR 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Active零件包装代码：SOIC
包装说明：SO-8针数：8
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8542.39.00.01风险等级：5.81
Is Samacsys：N高边驱动器：YES
接口集成电路类型：HALF BRIDGE BASED MOSFET DRIVERJESD-30 代码：R-PDSO-G8
JESD-609代码：e0长度：4.9 mm
功能数量：1端子数量：8
标称输出峰值电流：3 A封装主体材料：PLASTIC/EPOXY
封装代码：SOP封装等效代码：SOP8,.25
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED电源：5 V
认证状态：Not Qualified座面最大高度：1.75 mm
子类别：MOSFET Drivers标称供电电压：5 V
电源电压1-最大：26 V电源电压1-分钟：4 V
表面贴装：YES技术：BICMOS
端子面层：TIN LEAD端子形式：GULL WING
端子节距：1.27 mm端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED宽度：3.9 mm
Base Number Matches：1

SC1205HSTR 数据手册

 浏览型号SC1205HSTR的Datasheet PDF文件第2页浏览型号SC1205HSTR的Datasheet PDF文件第3页浏览型号SC1205HSTR的Datasheet PDF文件第4页浏览型号SC1205HSTR的Datasheet PDF文件第5页浏览型号SC1205HSTR的Datasheet PDF文件第6页浏览型号SC1205HSTR的Datasheet PDF文件第7页 
SC1205H  
High Speed Synchronous Power  
MOS!ET Driver  
POWER MANAGEMENT  
PRELIMINARY  
ꢀeatures  
Description  
The SC1205H is a cost effective, High Drive Voltage,  
Dual MOSꢀET Driver designed for switching High and Low  
side Power MOSꢀETs. Each driver is capable of Ultra-  
fast rise/fall times as well as a 20ns max propagation  
delay from input transition to the gate of the power ꢀET’s.  
An internal Overlap Protection circuit prevents shoot-  
through from Vin to GND in the main and synchronous  
MOSꢀETs. The Adaptive Overlap Protection circuit en-  
sures the Bottom ꢀET does not turn on until the Top ꢀET  
source has reached a voltage low enough to prevent  
cross-conduction.  
u Higher efficiency (>90%)  
u ꢀast rise and fall times (15ns typical with 3000pf  
load)  
u Higher gate drive voltage (8V) for optimum  
MOSꢀET RDS_ON at minimum switching loss  
u Ultra-low (<20ns) propagation delay (BG going low)  
u 5 Amp peak drive current  
u Adaptive non-overlapping gate drives provide  
shoot-through protection  
u ꢀloating top drive switches up to 18V  
u Under-voltage lock-out  
u Over-temperature shutdown  
Higher gate voltage drive capability of 8V (top and  
bottom) optimally reduces Rds_on of power MOSꢀETs  
without excessive driver and ꢀET switching losses. The  
high current drive capability (5A peak) allows fast switch-  
ing, thus reducing switching losses at high (up to 1MHz)  
frequencies without causing thermal stress on the driver.  
u Less than 10µA supply current when EN is low  
u Low cost  
Applications  
u Intel PentiumTM power supplies  
u AMD AthlonTM and K8TM power supplies  
u High efficiency portable and notebook computers  
u Battery powered applications  
The high voltage CMOS process allows operation from 5-  
18 Volts at top MOSꢀET drain, thus making SC1205H  
suitable for battery powered applications. Connecting  
Enable pin (EN) to logic low shuts down both drives and  
reduces operating current to less than 10µA.  
u High frequency (to 1.0 MHz) operation allows use  
of small inductors and low cost caps in place of  
electrolytics  
An under-voltage-lock-out and overtemperature shut-  
down feature is included to guarantee proper and safe  
operation. The SC1205H is offered in a standard SO-8  
package.  
Typical Application Circuit  
2.5m  
Vin 5-12V  
2200uf  
10u,CER  
+8V  
10nf  
10  
70N03  
1
2
3
4
5
6
7
8
16  
15  
14  
13  
12  
11  
10  
9
BST  
VID4  
VCC  
BGOUT  
OC+  
TG  
+8V  
VID3  
VS  
EN  
DRN  
70N03  
VID2  
BG  
VID1  
OUT1  
OUT2  
OC-  
CO  
SC1205H  
GND  
VID0  
1.5V,40A  
ERROUT  
FB  
70N03  
BST  
UVLO  
GND  
TG  
+8V  
Rf  
RREF  
VS  
EN  
CO  
DRN  
70N03  
Rref  
BG  
SC2422B  
Ri  
SC1205H  
GND  
1
www.semtech.com  
Revision 2, June 2002  
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中文翻译

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