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SC1205CSTR PDF预览

SC1205CSTR

更新时间: 2024-10-26 13:13:15
品牌 Logo 应用领域
商升特 - SEMTECH 驱动器
页数 文件大小 规格书
12页 251K
描述
Half Bridge Based MOSFET Driver, 3A, CMOS, PDSO8, MS-012AA, SOP-8

SC1205CSTR 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:SOIC
包装说明:SOP, SOP8,.25针数:8
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.8
高边驱动器:YES接口集成电路类型:HALF BRIDGE BASED MOSFET DRIVER
JESD-30 代码:R-PDSO-G8JESD-609代码:e0
长度:4.9 mm功能数量:1
端子数量:8标称输出峰值电流:3 A
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP8,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
电源:5 V认证状态:Not Qualified
座面最大高度:1.75 mm子类别:MOSFET Drivers
最大供电电压:6 V最小供电电压:4.15 V
标称供电电压:5 V表面贴装:YES
技术:CMOS端子面层:TIN LEAD
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
断开时间:0.024 µs接通时间:0.032 µs
宽度:3.9 mmBase Number Matches:1

SC1205CSTR 数据手册

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SC1205  
High Speed Synchronous  
Power MOSFET Driver  
POWER MANAGEMENT  
Features  
Description  
The SC1205 is a cost effective Dual MOSFET Driver de-  
signed for switching High and Low side Power MOSFETs.  
Each driver is capable of driving a 3000pF load in 20ns  
max rise/fall time and has a 20ns max propagation de-  
lay from input transition to the gate of the power FET’s.  
An internal Overlap Protection circuit prevents shoot-  
through from Vin to GND in the main and synchronous  
MOSFET’s. The Adaptive Overlap Protection circuit en-  
sures the Bottom FET does not turn on until the Top FET  
source has reached a voltage low enough to prevent  
cross-conduction.  
‹ Fast rise and fall times (15ns typical with 3000pf  
load)  
‹ 3 Amp peak drive current  
‹ 14ns max Propagation delay (BG going low)  
‹ Adaptive Non-overlapping Gate Drives provide  
shoot-through protection  
‹ Floating top drive switches up to 25V  
‹ Under-Voltage lock-out  
‹ Overtemperature protection  
‹ Less than 10µA supply current when EN is low  
‹ Low cost  
The high current drive capability (3A peak) allows fast  
switching, thus reducing switching losses at high (up to  
1MHz) frequencies without overheating the driver. The  
high voltage CMOS process allows operation from 5-25  
Volts at top MOSFET drain, thus making SC1205 suit-  
able for battery powered applications. Connecting En-  
able pin (EN) to logic low shuts down both drives and  
reduces operating current to less than 10uA.  
Applications  
‹ High Density sunchronous power supplies  
‹ Motor Drives/Class-D amps/Half bridge drivers  
‹ High frequency (to 1.2 MHz) operation allows use  
of small inductors and low cost caps in place of  
electrolytics  
‹ High efficiency portable computers  
‹ Battery powered applications  
An Under-Voltage-Lock-Out circuit is included to guaran-  
tee that both driver outputs are low when the 5V logic  
level is less than or equal to 4.4V (typ) at supply ramp up  
(4.35V at supply ramp down). An Internal temperature  
sensor shuts down all drives in the event of  
overtemperature. SC1205 is fabricated utilizing Bi-CMOS  
technology for low quiescent current. The SC1205 is of-  
fered in a standard SO-8 package.  
Typical Application Circuit  
2.5m  
Vin 5-12V  
10u,CER  
2200uf  
10nf  
10  
70N03  
1
2
3
4
5
6
7
8
16  
15  
14  
13  
12  
11  
10  
9
VID4  
VID3  
VID2  
VID1  
VID0  
ERROUT  
FB  
VCC  
BGOUT  
OC+  
TG  
+5V  
VS  
EN  
DRN  
70N03  
BG  
OUT1  
OUT2  
OC-  
CO  
SC1205  
70N03  
UVLO  
GND  
TG  
Rf  
RREF  
VS  
EN  
CO  
DRN  
70N03  
Rref  
BG  
SC2422A  
Ri  
SC1205  
Vcore, 1.7v,40A  
1
www.semtech.com  
Revision: September 22, 2004  

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