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SC1205CSTR

更新时间： 2024-10-26 13:13:15

品牌	Logo	应用领域
商升特 - SEMTECH		驱动器
页数	文件大小	规格书
12页	251K
描述
Half Bridge Based MOSFET Driver, 3A, CMOS, PDSO8, MS-012AA, SOP-8

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技术参数
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SC1205CSTR 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Obsolete	零件包装代码：	SOIC
包装说明：	SOP, SOP8,.25	针数：	8
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8542.39.00.01	风险等级：	5.8
高边驱动器：	YES	接口集成电路类型：	HALF BRIDGE BASED MOSFET DRIVER
JESD-30 代码：	R-PDSO-G8	JESD-609代码：	e0
长度：	4.9 mm	功能数量：	1
端子数量：	8	标称输出峰值电流：	3 A
封装主体材料：	PLASTIC/EPOXY	封装代码：	SOP
封装等效代码：	SOP8,.25	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	NOT SPECIFIED
电源：	5 V	认证状态：	Not Qualified
座面最大高度：	1.75 mm	子类别：	MOSFET Drivers
最大供电电压：	6 V	最小供电电压：	4.15 V
标称供电电压：	5 V	表面贴装：	YES
技术：	CMOS	端子面层：	TIN LEAD
端子形式：	GULL WING	端子节距：	1.27 mm
端子位置：	DUAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
断开时间：	0.024 µs	接通时间：	0.032 µs
宽度：	3.9 mm	Base Number Matches：	1

SC1205CSTR 数据手册

SC1205

High Speed Synchronous

Power MOSFET Driver

POWER MANAGEMENT

Features

Description

The SC1205 is a cost effective Dual MOSFET Driver de-

signed for switching High and Low side Power MOSFETs.

Each driver is capable of driving a 3000pF load in 20ns

max rise/fall time and has a 20ns max propagation de-

lay from input transition to the gate of the power FET’s.

An internal Overlap Protection circuit prevents shoot-

through from Vin to GND in the main and synchronous

MOSFET’s. The Adaptive Overlap Protection circuit en-

sures the Bottom FET does not turn on until the Top FET

source has reached a voltage low enough to prevent

cross-conduction.

Fast rise and fall times (15ns typical with 3000pf

load)

3 Amp peak drive current

14ns max Propagation delay (BG going low)

Adaptive Non-overlapping Gate Drives provide

shoot-through protection

Floating top drive switches up to 25V

Under-Voltage lock-out

Overtemperature protection

Less than 10µA supply current when EN is low

Low cost

The high current drive capability (3A peak) allows fast

switching, thus reducing switching losses at high (up to

1MHz) frequencies without overheating the driver. The

high voltage CMOS process allows operation from 5-25

Volts at top MOSFET drain, thus making SC1205 suit-

able for battery powered applications. Connecting En-

able pin (EN) to logic low shuts down both drives and

reduces operating current to less than 10uA.

Applications

High Density sunchronous power supplies

Motor Drives/Class-D amps/Half bridge drivers

High frequency (to 1.2 MHz) operation allows use

of small inductors and low cost caps in place of

electrolytics

High efficiency portable computers

Battery powered applications

An Under-Voltage-Lock-Out circuit is included to guaran-

tee that both driver outputs are low when the 5V logic

level is less than or equal to 4.4V (typ) at supply ramp up

(4.35V at supply ramp down). An Internal temperature

sensor shuts down all drives in the event of

overtemperature. SC1205 is fabricated utilizing Bi-CMOS

technology for low quiescent current. The SC1205 is of-

fered in a standard SO-8 package.

Typical Application Circuit

2.5m

Vin 5-12V

10u,CER

2200uf

10nf

70N03

VID4

VID3

VID2

VID1

VID0

ERROUT

VCC

BGOUT

OC+

+5V

DRN

70N03

OUT1

OUT2

OC-

SC1205

70N03

UVLO

GND

RREF

DRN

70N03

Rref

SC2422A

SC1205

Vcore, 1.7v,40A

www.semtech.com

Revision: September 22, 2004

12 3 4 5 6 7...12

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与SC1205CSTR相关器件

型号	品牌	获取价格	描述	数据表
SC1205CSTRT	SEMTECH	获取价格	High Speed Synchronous Power MOSFET Driver
SC1205H	SEMTECH	获取价格	high speed syncronous power mosfet driver
SC1205HSTR	SEMTECH	获取价格	high speed syncronous power mosfet driver
SC1206	BEL	获取价格	SMD POWER INDUCTORS Open frame construction
SC1206	SOCAY	获取价格	Surface Mount 2-Electrode Gas Discharge Tube (GDT)
SC1206-100	BEL	获取价格	SMD POWER INDUCTORS Open frame construction
SC1206-101	BEL	获取价格	SMD POWER INDUCTORS Open frame construction
SC1206-150ASMD	SOCAY	获取价格	Surface Mount 2-Electrode Gas Discharge Tube (GDT)
SC1206-1R0	BEL	获取价格	SMD POWER INDUCTORS Open frame construction
SC1206-200ASMD	SOCAY	获取价格	Surface Mount 2-Electrode Gas Discharge Tube (GDT)

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