MBRS140T3
Preferred Device
Surface Mount
Schottky Power Rectifier
Schottky Power Rectifiers employ the use of the Schottky Barrier
principle in a large area metal−to−silicon power diode.
State−of−the−artgeometry features epitaxial construction with oxide
passivation and metal overlay contact. Ideally suited for low voltage,
high frequency rectification, or as free wheeling and polarity
protection diodes in surface mount applications where compact size
and weight are critical to the system.
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERE, 40 VOLTS
Features
• Small Compact Surface Mountable Package with J−Bend Leads
• Rectangular Package for Automated Handling
• Highly Stable Oxide Passivated Junction
• Very Low Forward Voltage Drop
SMB
CASE 403A
PLASTIC
(0.55 V Max @ 1.0 A, T = 25°C)
J
• Excellent Ability to Withstand Reverse Avalanche Energy Transients
• Guardring for Stress Protection
• Pb−Free Package is Available
Mechanical Characteristics
MARKING DIAGRAM
• Case: Epoxy, Molded
• Weight: 95 mg (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
AYWW
B14 G
G
• Lead and Mounting Surface Temperature for Soldering Purposes:
B14 = Device Code
260°C Max. for 10 Seconds
A
Y
= Assembly Location
= Year
• Cathode Polarity Band
WW = Work Week
G
= Pb−Free Package
MAXIMUM RATINGS
(Note: Microdot may be in either location)
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
V
40
V
RRM
RWM
ORDERING INFORMATION
R
†
Device
Package
Shipping
Average Rectified Forward Current
T = 115°C
L
I
1.0
40
A
A
F(AV)
MBRS140T3
MBRS140T3G
SMB
2500/Tape & Reel
2500/Tape & Reel
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
I
FSM
SMB
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Operating Junction Temperature
T
−65 to +125
°C
J
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2007
1
Publication Order Number:
February, 2007 − Rev. 7
MBRS140T3/D