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SBRS8120NT3G PDF预览

SBRS8120NT3G

更新时间： 2024-09-17 11:01:35
品牌 Logo 应用领域
安森美 - ONSEMI 测试光电二极管整流二极管
页数 文件大小 规格书
4页 48K
描述
1.0 A, 20 V, Schottky Power Rectifier, Surface Mount

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SBRS8120NT3G 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：SMB, 2 PINReach Compliance Code：compliant
Factory Lead Time：43 weeks 1 day风险等级：5.67
其他特性：FREE WHEELING DIODE应用：POWER
配置：SINGLE二极管元件材料：SILICON
二极管类型：RECTIFIER DIODE最大正向电压 (VF)：0.6 V
JESD-30 代码：R-PDSO-J2最大非重复峰值正向电流：40 A
元件数量：1相数：1
端子数量：2最高工作温度：125 °C
最低工作温度：-65 °C最大输出电流：1 A
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE参考标准：AEC-Q101
最大重复峰值反向电压：20 V最大反向电流：1000 µA
反向测试电压：20 V表面贴装：YES
技术：SCHOTTKY端子形式：J BEND
端子位置：DUALBase Number Matches：1

SBRS8120NT3G 数据手册

 浏览型号SBRS8120NT3G的Datasheet PDF文件第2页浏览型号SBRS8120NT3G的Datasheet PDF文件第3页浏览型号SBRS8120NT3G的Datasheet PDF文件第4页 
MBRS120T3  
Preferred Device  
Surface Mount  
Schottky Power Rectifier  
This device employs the Schottky Barrier principle in a large area  
metal−to−silicon power diode. State−of−the−art geometry features  
epitaxial construction with oxide passivation and metal overlay  
contact. Ideally suited for low voltage, high frequency rectification, or  
as free wheeling and polarity protection diodes in surface mount  
applications where compact size and weight are critical to the system.  
http://onsemi.com  
SCHOTTKY BARRIER  
RECTIFIER  
1.0 AMPERE, 20 VOLTS  
Features  
• Small Compact Surface Mountable Package with J−Bend Leads  
• Rectangular Package for Automated Handling  
• Highly Stable Oxide Passivated Junction  
• Very Low Forward Voltage Drop (0.55 Volts Max @ 1.0 A, T = 25°C)  
J
• Excellent Ability to Withstand Reverse Avalanche Energy Transients  
• Guard−Ring for Stress Protection  
SMB  
CASE 403A  
PLASTIC  
• Pb−Free Package is Available  
Mechanical Characteristics  
• Case: Epoxy, Molded  
MARKING DIAGRAM  
• Weight: 95 mg (Approximately)  
• Finish: All External Surfaces Corrosion Resistant and Terminal  
Leads are Readily Solderable  
• Lead and Mounting Surface Temperature for Soldering Purposes:  
AYWW  
B12G  
G
260°C Max. for 10 Seconds  
• Cathode Polarity Band  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
B12  
A
Y
= Specific Device Code  
= Assembly Location  
= Year  
= Work Week  
= Pb−Free Package  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
V
20  
V
RRM  
RWM  
WW  
G
V
R
Average Rectified Forward Current  
I
1.0  
40  
A
A
F(AV)  
(Note: Microdot may be in either location)  
(T = 115°C)  
L
Non−Repetitive Peak Surge Current  
(Surge Applied at Rated Load Conditions  
Halfwave, Single Phase, 60 Hz)  
I
FSM  
ORDERING INFORMATION  
†
Device  
Package  
Shipping  
Operating Junction Temperature  
T
−65 to +125  
°C  
SMB  
2500/Tape & Reel  
2500/Tape & Reel  
J
MBRS120T3  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
MBRS120T3G  
SMB  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
August, 2005 − Rev. 6  
MBRS120T3/D  
1234

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