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SBRS8190T3G-VF01 PDF预览

SBRS8190T3G-VF01

更新时间： 2024-11-07 11:01:31
品牌 Logo 应用领域
安森美 - ONSEMI 光电二极管整流二极管
页数 文件大小 规格书
4页 49K
描述
肖特基功率整流器，表面贴装，1.0 A，90 V

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中文翻译

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SBRS8190T3G-VF01 技术参数

是否无铅： 不含铅生命周期：Lifetime Buy
包装说明：R-PDSO-J2Reach Compliance Code：not_compliant
风险等级：5.68其他特性：FREE WHEELING DIODE
应用：POWER配置：SINGLE
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
最大正向电压 (VF)：0.75 VJESD-30 代码：R-PDSO-J2
JESD-609代码：e3湿度敏感等级：1
最大非重复峰值正向电流：50 A元件数量：1
相数：1端子数量：2
最高工作温度：175 °C最低工作温度：-65 °C
最大输出电流：2 A封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
参考标准：AEC-Q101最大重复峰值反向电压：90 V
最大反向电流：500 µA表面贴装：YES
技术：SCHOTTKY端子面层：Tin (Sn)
端子形式：J BEND端子位置：DUAL
Base Number Matches：1

SBRS8190T3G-VF01 数据手册

 浏览型号SBRS8190T3G-VF01的Datasheet PDF文件第2页浏览型号SBRS8190T3G-VF01的Datasheet PDF文件第3页浏览型号SBRS8190T3G-VF01的Datasheet PDF文件第4页 
MBRS1100T3, MBRS190T3  
Preferred Devices  
Schottky Power Rectifier  
Surface Mount Power Package  
Schottky Power Rectifiers employ the use of the Schottky Barrier  
principle in a large area metal-to-silicon power diode. State-of-the-art  
geometry features epitaxial construction with oxide passivation and  
metal overlay contact. Ideally suited for low voltage, high frequency  
rectification, or as free wheeling and polarity protection diodes, in  
surface mount applications where compact size and weight are critical  
to the system. These state-of-the-art devices have the following  
features:  
http://onsemi.com  
SCHOTTKY BARRIER  
RECTIFIER  
1.0 AMPERE  
90, 100 VOLTS  
Features  
• Pb−Free Packages are Available  
• Small Compact Surface Mountable Package with J-Bend Leads  
• Rectangular Package for Automated Handling  
• Highly Stable Oxide Passivated Junction  
• High Blocking Voltage − 100 Volts  
SMB  
CASE 403A  
PLASTIC  
• 175°C Operating Junction Temperature  
• Guardring for Stress Protection  
MARKING DIAGRAM  
Mechanical Characteristics  
• Case: Epoxy, Molded  
AYW  
B1xG  
• Weight: 95 mg (approximately)  
• Finish: All External Surfaces Corrosion Resistant and Terminal  
Leads are Readily Solderable  
B1 = Device Code  
x
= C for MBRS1100T3  
9 for MBRS190T3  
= Assembly Location  
= Year  
= Work Week  
= Pb−Free Package  
• Lead and Mounting Surface Temperature for Soldering Purposes:  
260°C Max. for 10 Seconds  
A
Y
W
G
• Shipped in 12 mm Tape and Reel, 2500 units per reel  
• Cathode Polarity Band  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage MBRS190T3  
MBRS1100T3  
V
V
RRM  
V
RWM  
V
90  
100  
R
Preferred devices are recommended choices for future use  
and best overall value.  
Average Rectified Forward Current  
I
A
A
F(AV)  
T = 163°C  
T = 148°C  
L
1.0  
2.0  
L
Non−Repetitive Peak Surge Current  
(Surge Applied at Rated Load Conditions  
Halfwave, Single Phase, 60 Hz)  
I
50  
FSM  
Operating Junction Temperature (Note 1)  
Voltage Rate of Change  
T
−65 to +175  
10  
°C  
J
dv/dt  
V/ns  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. The heat generated must be less than the thermal conductivity from  
Junction−to−Ambient: dP /dT < 1/R .  
q
JA  
D
J
©
Semiconductor Components Industries, LLC, 2007  
1
Publication Order Number:  
March, 2007 − Rev. 9  
MBRS1100T3/D  
 
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