Datasheet > SBRS8190T3G

SBRS8190T3G

更新时间： 2024-11-06 12:27:27

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
4页	132K
描述
Schottky Power Rectifier

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中文翻译

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技术参数
数据手册

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SBRS8190T3G 技术参数

是否无铅：	不含铅	生命周期：	Lifetime Buy
包装说明：	R-PDSO-J2	针数：	2
Reach Compliance Code：	not_compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.80	风险等级：	7.43
其他特性：	FREE WHEELING DIODE	应用：	POWER
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	RECTIFIER DIODE	最大正向电压 (VF)：	0.75 V
JESD-30 代码：	R-PDSO-J2	JESD-609代码：	e3
最大非重复峰值正向电流：	50 A	元件数量：	1
相数：	1	端子数量：	2
最高工作温度：	175 °C	最低工作温度：	-65 °C
最大输出电流：	2 A	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	NOT SPECIFIED	参考标准：	AEC-Q101
最大重复峰值反向电压：	90 V	最大反向电流：	500 µA
反向测试电压：	90 V	子类别：	Rectifier Diodes
表面贴装：	YES	技术：	SCHOTTKY
端子面层：	Tin (Sn)	端子形式：	J BEND
端子位置：	DUAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

SBRS8190T3G 数据手册

MBRS1100T3G,

SBRS81100T3G,

MBRS190T3G,

SBRS8190T3G

Preferred Devices

Schottky Power Rectifier

http://onsemi.com

Surface Mount Power Package

SCHOTTKY BARRIER

RECTIFIER

Schottky Power Rectifiers employ the use of the Schottky Barrier

principle in a large area metal-to-silicon power diode. State-of-the-art

geometry features epitaxial construction with oxide passivation and

metal overlay contact. Ideally suited for low voltage, high frequency

rectification, or as free wheeling and polarity protection diodes, in

surface mount applications where compact size and weight are critical

to the system. These state-of-the-art devices have the following

features:

1.0 AMPERE

90, 100 VOLTS

Features

SMB

 Small Compact Surface Mountable Package with J-Bend Leads

 Rectangular Package for Automated Handling

 Highly Stable Oxide Passivated Junction

 High Blocking Voltage − 100 Volts

CASE 403A

MARKING DIAGRAM

 175C Operating Junction Temperature

 Guardring for Stress Protection

 AEC−Q101 Qualified and PPAP Capable

 SBRS8 Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements

 All Packages are Pb−Free*

AYWW

B1xG

B1 = Device Code

= C for MBRS1100T3

9 for MBRS190T3

= Assembly Location

= Year

Mechanical Characteristics

 Case: Epoxy, Molded

 Weight: 95 mg (approximately)

 Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

WW = Work Week

= Pb−Free Package

(Note: Microdot may be in either location)

 Lead and Mounting Surface Temperature for Soldering Purposes:

260C Max. for 10 Seconds

 Shipped in 12 mm Tape and Reel, 2,500 units per reel

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

 Cathode Polarity Band

Preferred devices are recommended choices for future use

and best overall value.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

 Semiconductor Components Industries, LLC, 2012

Publication Order Number:

January, 2012 − Rev. 10

MBRS1100T3/D

12 3 4

中文翻译

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与SBRS8190T3G相关器件

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SBRS8190T3G-VF01	ONSEMI	获取价格	肖特基功率整流器，表面贴装，1.0 A，90 V
SBRS8320T3G	ONSEMI	获取价格	Surface Mount Schottky Power Rectifier
SBRS8340T3G	ONSEMI	获取价格	Surface Mount Schottky Power Rectifier
SBRT05U10LP-7B	DIODES	获取价格	Rectifier Diode, Avalanche, 1 Element, 0.5A, 10V V(RRM), Silicon, X1-DFN1006-2, 2 PIN
SBRT05U20LPS	DIODES	获取价格	0.5A TRENCH SCHOTTKY BARRIER RECTIFIER
SBRT05U20LPSQ	DIODES	获取价格	0.5A TRENCH SBR TRENCH SUPER BARRIER RECTIFIER
SBRT05U20S3Q	DIODES	获取价格	0.5A TrenchSBR TRENCH SUPER BARRIER RECTIFIER
SBRT05U20S3Q-7	DIODES	获取价格	0.5A TrenchSBR TRENCH SUPER BARRIER RECTIFIER
SBRT10A100CTL-13	DIODES	获取价格	Rectifier Diode, 1 Phase, 2 Element, 5A, 100V V(RRM), Silicon, TO-252, DPAK-3/2
SBRT10M50SP5	DIODES	获取价格	10A Trench SBR TRENCH SUPER BARRIER RECTIFIER POWERDI

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