Datasheet > SBR30M100CTF

SBR30M100CTF

更新时间： 2024-11-15 09:37:27

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
3页	92K
描述
Rectifier Diode, 1 Phase, 2 Element, 30A, 100V V(RRM), Silicon, TO-220AB, PLASTIC PACKAGE-3

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SBR30M100CTF 数据手册

SBR30M100CT

SBR30M100CTF

SBR30M100CTI

SBR30M100CTB

Using state-of-the-art SBR IC process technology,

the following features are made possible in a single device:

Major ratings and characteristics

Characteristics

_F(AV)Rectangular Waveform

Values

Units

Device optimized for high temperature

Power Supply applications

V_RRM

100

V_F@15A, Tj=125^OC

0.68

V, typ

^OC

Tj (operating/storage)

-65 to 200

ELECTRICAL:

MECHANICAL:

* Ultra High Thermal Reliability

* Low Reverse Leakage

* Molded Plastic TO-220AB, TO-262, TO-263, and

ITO-220 packages

* Reliable High Temperature Operation

* Super Barrier Design

* Softest, fast switching capability

* 200^OC Operating Junction Temperature

Case Styles

SBR30M100CT

SBR30M100CTF

SBR30M100CTI

SBR30M100CTB

Common

Cathode

Anode

Cathode

_Anode1

_Anode1 Cathode

Anode

_Anode1

Anode

TO-220AB

ITO-220

TO-262

TO-263

________________________________________________________________________________________________

www.apdsemi.com Version 2.0 - April, 2006

12 3

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