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SBR30M100CTFP-JT-G PDF预览

SBR30M100CTFP-JT-G

更新时间： 2024-09-26 12:58:27
品牌 Logo 应用领域
美台 - DIODES /
页数 文件大小 规格书
3页 185K
描述
Rectifier Diode, 1 Phase, 2 Element, 15A, 100V V(RRM), Silicon, TO-220AB, GREEN, PLASTIC, ITO-220AB, 3 PIN

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SBR30M100CTFP-JT-G 技术参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：Active零件包装代码：TO-220AB
包装说明：GREEN, PLASTIC, ITO-220AB, 3 PIN针数：3
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.10.00.80风险等级：5.2
Is Samacsys：N应用：GENERAL PURPOSE
外壳连接：ISOLATED配置：COMMON CATHODE, 2 ELEMENTS
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
最大正向电压 (VF)：0.96 VJEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3JESD-609代码：e3
最大非重复峰值正向电流：250 A元件数量：2
相数：1端子数量：3
最高工作温度：175 °C最低工作温度：-65 °C
最大输出电流：15 A封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：260最大重复峰值反向电压：100 V
最大反向电流：12 µA子类别：Rectifier Diodes
表面贴装：NO端子面层：MATTE TIN
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：40Base Number Matches：1

SBR30M100CTFP-JT-G 数据手册

 浏览型号SBR30M100CTFP-JT-G的Datasheet PDF文件第2页浏览型号SBR30M100CTFP-JT-G的Datasheet PDF文件第3页 
SBR30M100CT  
SBR30M100CTFP  
30A SBR®  
Super Barrier Rectifier  
Features  
Mechanical Data  
•
•
•
•
•
Low Forward Voltage Drop  
Excellent High Temperature Stability  
Super Barrier Design  
Soft, Fast Switching Capability  
Molded Plastic TO-220AB,  
and ITO-220AB packages  
•
Case Material: Molded Plastic, UL Flammability  
Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminals: Matte Tin Finish annealed over  
Copper leadframe. Solderable per MIL-STD-202,  
Method 208  
•
•
•
•
Marking: See Page 3  
Ordering Information: See Page 3  
•
•
200ºC Operating Junction Temperature  
Lead Free Finish, RoHS Compliant (Note 2)  
Maximum Ratings @ TA = 25ºC unless otherwise specified  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Characteristic  
Symbol  
Value  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VRM  
100  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
71  
30  
V
A
Average Rectified Output Current @ TC = 175ºC  
Non-Repetitive Peak Forward Surge Current 8.3ms  
Single Half Sine-Wave Superimposed on Rated Load  
IFSM  
IRRM  
250  
3
A
A
Peak Repetitive Reverse Surge Current (2uS-1Khz)  
Maximum Thermal Resistance (per leg)  
Package = TO-220AB  
Package = ITO-220AB  
RӨJC  
2
4
°C/W  
ºC  
Operating and Storage Temperature Range  
TJ, TSTG  
-65 to +200  
Electrical Characteristics @ TA = 25ºC unless otherwise specified  
Min  
Typ  
Max  
Unit  
Characteristic  
Symbol  
Test Condition  
Reverse Breakdown Voltage (Note 1)  
V(BR)R  
100  
-
-
V
IR = 12 µA  
-
0.68  
-
0.85  
0.73  
0.96  
IF = 15A, TJ = 25ºC  
IF = 15A,TJ = 125ºC  
Forward Voltage Drop  
VF  
-
-
V
IF = 30A, TJ = 25ºC  
12  
3
µA  
VR = 100V, TJ = 25 ºC  
VR = 100V, TJ = 125 ºC  
Leakage Current (Note 1)  
Notes:  
IR  
-
mA  
1. Short duration pulse test used to minimize self-heating effect.  
2. RoHS revision 13.2.2003. High temperature solder exemption applied, see EU Directive Annex Note 7.  
__________  
SBR is a registered trademark of Diodes Incorporated.  
SBR30M100 Rev. 2  
1 of 3  
www.diodes.com  
January 2007  
© Diodes Incorporated  
123

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