Datasheet > SBR30U45CTI

SBR30U45CTI

更新时间： 2024-11-15 09:42:23

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
3页	71K
描述
Rectifier Diode, 1 Phase, 2 Element, 30A, 45V V(RRM), Silicon, TO-262AA, PLASTIC, TO-262, 3 PIN

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SBR30U45CTI 数据手册

SBR30U45CT

SBR30U45CTF

SBR30U45CTI

SBR30U45CTB

Using state-of-the-art SBR IC process technology,

the following features are made possible in a single device:

Major ratings and characteristics

Device optimized for low forward voltage drop to

maximize efficiency in Power Supply applications

Characteristics

_F(AV)Rectangular Waveform

Values

Units

V_RRM

V_F@15A, Tj=125^OC

0.41

V, typ

^OC

Tj (operating/storage)

-65 to 150

ELECTRICAL:

MECHANICAL:

* Ultra-Low Forward Voltage Drop

* Reliable High Temperature Operation

* Super Barrier Design

* Molded Plastic TO-220AB, TO-262, TO-263, and

ITO-220 packages

* Softest, fast switching capability

* 150^OC Operating Junction Temperature

Case Styles

SBR30U45CT

SBR30U45CTF

SBR30U45CTI

SBR30U45CTB

Common

Cathode

Common

Cathode

Common

Cathode

Anode

_Anode1

_Anode1 ^Cathode

Anode

TO-220AB

ITO-220

TO-262

TO-263

________________________________________________________________________________________________

www.apdsemi.com Version 2.0 - April 2006

12 3

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