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SBR3501GW PDF预览

SBR3501GW

更新时间: 2024-11-15 02:47:55
品牌 Logo 应用领域
虹扬 - HY /
页数 文件大小 规格书
3页 363K
描述
Glass Passivated 3 Phase Bridge Rectifiers

SBR3501GW 数据手册

 浏览型号SBR3501GW的Datasheet PDF文件第2页浏览型号SBR3501GW的Datasheet PDF文件第3页 
www.hygroup.com.tw  
SBR35GW SERIES  
Reverse Voltage - 50 to 1600Volts  
Forward Current - 35 Amperes  
Glass Passivated 3 Phase Bridge Rectifiers  
Features  
Low forward voltage drop  
SBRW  
High current capability  
RoHS  
COMPLIANT  
High reliability  
Meet UL flammability classification 94V-0  
Mechanical Data  
Case: Epoxy case with heat sink  
Polarity: Symbol marked on body  
Mounting position:  
Bolt pass through the mounting hole of body  
then fixto heat sink  
Mounting torque: 2 N.m  
Note: Products with logo  
or  
are made by HY Electronic (Cayman) Limited.  
Applications  
For use in high power supply inverters,servo  
motor and welding machine applications  
Package Outline Dimensions in Inches (Millimeters)  
Maximum Ratings and Electrical Characteristics  
Rating at 25ambient temperature unless otherwise specified.  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
SBR35  
Characteristics  
Symbol  
Unit  
00GW 01GW 02GW 04GW 06GW 08GW 10GW 12GW 14GW 16GW  
Maximum Repetitive Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
75  
100 200 400 600 800 1000 1200 1400 1600  
70 140 280 420 560 700 840 980 1120  
V
V
V
V
A
Maximum DC Blocking Voltage  
100 200 400 600 800 1000 1200 1400 1600  
Peak Non-Repetitive Reverse Voltage  
VRSM  
I(AV)  
150 275 500 725 900 1100 1300 1500 1700  
35  
Maximum Average Forward Rectified Current @TC=55  
Peak Forward Surge Current, 8.3mS Single Half Sine-Wave,  
Superimposed on Rated Load (JEDEC Method)  
450  
A
IFSM  
I2t Rating for Fusing (t<8.3mS)  
A2S  
V
I2 t  
840  
1.1  
Peak Forward Voltage per Diode at 17.5A DC  
VF  
5
3
μA  
mA  
V
Maximum DC Reverse Current at Rated @TJ=25℃  
DC Blocking Voltage per Diode @TJ=150℃  
RMS lsolation Voltage from Case to Lead  
Typical Thermal Resistance Junction to Case per Diode  
Operating Junction Temperature Range  
Storage Temperature Range  
IR  
2500  
VISO  
RθJC  
TJ  
0.9  
/W  
-40 to +150  
-40 to +150  
TSTG  
Note: The typical data above is for reference only  
SBR35*GW-B-00/99/92-00/01  
Rev. 11, 18-May-2020  

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