Datasheet > SBR35-12

SBR35-12

更新时间： 2024-11-15 02:48:35

品牌	Logo	应用领域
虹扬 - HY		/
页数	文件大小	规格书
4页	377K
描述
Silicon Passivated 3 Phase Bridge Rectifiers

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中文翻译

获取价格

数据手册

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SBR35-12 数据手册

www.hygroup.com.tw

SBR35 SERIES

Reverse Voltage - 50 to 1600Volts

Silicon Passivated 3 Phase Bridge Rectifiers

Forward Current - 35 Amperes

Features

● Low forward voltage drop

SBR

● High current capability

RoHS

COMPLIANT

● High reliability

●Meet UL flammability classification 94V-0

Mechanical Data

● Case: Epoxy case with heat sink

● Polarity: Symbol marked on body

● Mounting position:

● Bolt pass through the mounting hole of body

then fix to heat sink

● Mounting torque: 2 N.m

Note: Products with logo

are made by HY Electronic (Cayman) Limited.

Applications

● For use in high power supply inverters,servo

motor and welding machine applications

Package Outline Dimensions in Inches (Millimeters)

Maximum Ratings and Electrical Characteristics

Rating at 25℃ ambient temperature unless otherwise specified.

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

SBR35

-06 -08

100 200 400 600 800 1000 1200 1400 1600

70 140 280 420 560 700 840 980 1120

Characteristics

Symbol

Unit

-00

-01

-02

-04

-10

-12

-14

-16

Maximum Repetitive Peak Reverse Voltage

Maximum RMS Voltage

VRRM

VRMS

VDC

Maximum DC Blocking Voltage

100 200 400 600 800 1000 1200 1400 1600

Peak Non-Repetitive Reverse Voltage

VRSM

I(AV)

150 275 500 725 900 1100 1300 1500 1700

Maximum Average Forward Rectified Current @TC=60 ℃

Peak Forward Surge Current, 8.3mS Single Half Sine-Wave,

Superimposed on Rated Load (JEDEC Method)

500

IFSM

I²t Rating for Fusing (t<8.3mS)

A²S

I²t

1030

1.2

Peak Forward Voltage per Diode at 17.5A DC

Maximum DC Reverse Current at Rated @TJ=25℃

DC Blocking Voltage per Diode @TJ=125℃

Typical Thermal Resistance Junction to Case per Diode

Typical Thermal Resistance Case to Heatsink per Diode

RMS lsolation Voltage from Case to Lead

Operating Junction Temperature Range

Storage Temperature Range

μA

5.0

℃/W

1.16

RθJC

RθCS

VISO

0.2

2500

-55 to +150

℃

TSTG

℃

Note: The typical data above is for reference only

SBR35*-B-00/99/92/UN-00/01

Rev. 11, 19-May-2020

12 3 4

中文翻译

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与SBR35-12相关器件

型号	品牌	获取价格	描述	数据表
SBR3512A	CHENG-YI	获取价格	SILICON / GLASS PASSIVATED THREE PHASE BRIDGE RECTIFIERS
SBR35-12G	HY	获取价格	Glass Passivated 3 Phase Bridge Rectifiers
SBR3512GW	HY	获取价格	Glass Passivated 3 Phase Bridge Rectifiers
SBR35-12W	HY	获取价格	Silicon Passivated 3 Phase Bridge Rectifiers
SBR35-14	HY	获取价格	Silicon Passivated 3 Phase Bridge Rectifiers
SBR3514A	CHENG-YI	获取价格	SILICON / GLASS PASSIVATED THREE PHASE BRIDGE RECTIFIERS
SBR35-14G	HY	获取价格	Glass Passivated 3 Phase Bridge Rectifiers
SBR3514GW	HY	获取价格	Glass Passivated 3 Phase Bridge Rectifiers
SBR35-14W	HY	获取价格	Silicon Passivated 3 Phase Bridge Rectifiers
SBR3516	HY	获取价格	Bridge Rectifier Diode,