Datasheet > SBR3510

SBR3510

更新时间： 2024-11-14 19:18:23

品牌	Logo	应用领域
虹扬 - HY		二极管
页数	文件大小	规格书
4页	174K
描述
Bridge Rectifier Diode,

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技术参数
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SBR3510 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.72
二极管类型：	BRIDGE RECTIFIER DIODE	Base Number Matches：	1

SBR3510 数据手册

SBR25/35A SERIES

SILICON PASSIVATED THREE PHASE

BRIDGE RECTIFIERS

FEATURES

●Diffused Junction

REVERSE VOLTAGE - 50 to 1600 Volts

FORWARD CURRENT - 25/35 Ampreres

METAL HEAT SINK

SBR

.453(11.5)

.413(10.5)

●Low Forward Voltage Drop

●High Current Capability

●High Reliability

●High Surge Current Capability

●Ideal for Printed Circuit Boards

.035(0.9)

.028(0.7)

MECHANICAL DATA

Hole for

No.8 screw

193"(4.9)diam

.254(6.45)

.242(6.15)

●Case:Epoxy Case with Heat Sink lnterally

Mounted in the Bridge Encapsulation

●Terminals:Plated Leads Soiderable per

MIL-STD-202,Method 208

●Polarity:As Marked on Body

●Weight:20 grams(approx.)

.984(25.0)

.937(23.8)

1.133(28.8)

1.114(28.3)

●Mounting Position:

.984(25.0)

.937(23.8)

Bolt Down on Heatsink With Silicone Thermal

Compound Between Bridge and Mounting Surface

for Maximum Heat Transfer Efficiency

●Mounting Torque:20 in lbs. Max.

.866(22.0)

.803(20.4)

Dimensions in inches and (milimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25℃ambient temperature unless otherwise specified.

Single phase, half wave, 60Hz, resistive or inductive load.For capacitive load, derate current by 20%

VOLTAGE RATINGS

SYMBOL -00

V^RRM

-01

-02

-04

-06

-08

-10

-12

-14

-16

UNIT

CHARACTERISTICS

Peak Repetitive Voltage

100

200

400

600

800 1000 1200 1400 1600

Working Peak Reverse Voltage

DC Blocking Voltage

VRWM

Peak Non-Repetitive Reverse Voltage

RMS Reverse Voltage

VRSM

V^R(RMS)

150

275

140

500

280

725

420

900 1100 1300 1500 1700

560

700

840

980 1120

FORWARD CONDUCTION

CHARACTERISTICS

Maximum Average Forward

SBR25

SBR35

SYMBOL

I^O

UNIT

Rectified Current @TC=60℃

Non-Repetitive Peak Forward Surge Current

(No Voltage Reapplied t=8.3ms at 60HZ)

(No Voltage Reapplied t=10ms at 50HZ)

(100% VRRM Reapplied t=8.3ms at 60HZ)

(100% VRRM Reapplied t=10ms at 50HZ)

I2t Rating for fusing

375

360

314

300

500

475

420

400

I^FSM

580

635

410

450

(No Voltage Reapplied t=8.3ms at 60HZ)

(No Voltage Reapplied t=10ms at 50HZ)

(100% VRRM Reapplied t=8.3ms at 60HZ)

(100% VRRM Reapplied t=10ms at 50HZ)

1030

1130

730

A²S

I²t

800

Maximum Forward Voltage drop per element at

12.5A/17.5A Peak

1.1

1.2

μA

Peak Reverse Current (per leg) @T^J=25℃

At Rated DC Blocking Voltage @TJ=125℃

RMS lsolation Voltage from Case to Lead

5.0

2500

VISO

THERMAL CHARACTERISTICS

Operating Temperature Range

-55 to +150

T^J

℃

T^STG

Storage Temperature Range

Thermal Resistance Junction to Case at

DC Operation per Bridge

R^θJC

R^θCS

1.42

1.16

K/W

Thermal Resistance Case to Heatsink

Mounting Surface, Smooth, Flat and Greased

0.2

REV. 2, 25-Jul-2012

~ 628 ~

12 3 4

中文翻译

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与SBR3510相关器件

型号	品牌	获取价格	描述	数据表
SBR35-10	HY	获取价格	Silicon Passivated 3 Phase Bridge Rectifiers
SBR3510A	CHENG-YI	获取价格	SILICON / GLASS PASSIVATED THREE PHASE BRIDGE RECTIFIERS
SBR35-10G	HY	获取价格	Glass Passivated 3 Phase Bridge Rectifiers
SBR3510GW	HY	获取价格	Glass Passivated 3 Phase Bridge Rectifiers
SBR35-10W	HY	获取价格	Silicon Passivated 3 Phase Bridge Rectifiers
SBR3512	HY	获取价格	Bridge Rectifier Diode,
SBR35-12	HY	获取价格	Silicon Passivated 3 Phase Bridge Rectifiers
SBR3512A	CHENG-YI	获取价格	SILICON / GLASS PASSIVATED THREE PHASE BRIDGE RECTIFIERS
SBR35-12G	HY	获取价格	Glass Passivated 3 Phase Bridge Rectifiers
SBR3512GW	HY	获取价格	Glass Passivated 3 Phase Bridge Rectifiers

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