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SBR30U30CT-G PDF预览

SBR30U30CT-G

更新时间: 2024-11-14 21:18:11
品牌 Logo 应用领域
美台 - DIODES 软恢复二极管快速软恢复二极管局域网
页数 文件大小 规格书
4页 95K
描述
Rectifier Diode, 1 Phase, 2 Element, 30A, 30V V(RRM), Silicon, TO-220AB, GREEN, PLASTIC PACKAGE-3

SBR30U30CT-G 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-220AB
包装说明:R-PSFM-T3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.14
应用:FAST SOFT RECOVERY外壳连接:CATHODE
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.37 V
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3最大非重复峰值正向电流:280 A
元件数量:2相数:1
端子数量:3最高工作温度:150 °C
最低工作温度:-65 °C最大输出电流:30 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):260
认证状态:Not Qualified最大重复峰值反向电压:30 V
子类别:Rectifier Diodes表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:40
Base Number Matches:1

SBR30U30CT-G 数据手册

 浏览型号SBR30U30CT-G的Datasheet PDF文件第2页浏览型号SBR30U30CT-G的Datasheet PDF文件第3页浏览型号SBR30U30CT-G的Datasheet PDF文件第4页 
SBR30U30CT  
30A SBR®  
SUPER BARRIER RECTIFIER  
Please click here to visit our online spice models database.  
Features  
Mechanical Data  
Ultra Low Forward Voltage Drop  
Excellent High Temperature Stability  
Case: TO-220AB  
Case Material: Molded Plastic, UL Flammability Classification  
Rating 94V-0  
Terminals: Matte Tin Finish annealed over Copper leadframe.  
Solderable per MIL-STD-202, Method 208  
Marking Information: See Page 3  
Ordering Information: See Page 3  
Weight: 1.85 grams (approximate)  
Superior Reverse Avalanche Capability  
Patented Super Barrier Rectifier Technology  
Soft, Fast Switching Capability  
150°C Operating Junction Temperature  
Lead Free Finish, RoHS Compliant (Note 2)  
Also Available in Green Molding Compound (Note 4)  
TO-220AB  
Bottom View  
TO-220AB  
Top View  
Package Pin Out  
Configuration  
Maximum Ratings @T = 25°C unless otherwise specified  
A
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitance load, derate current by 20%.  
Characteristic  
Symbol  
VRRM  
VRWM  
VRM  
Value  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
30  
V
30  
A
A
Average Rectified Output Current @ TC = 140ºC  
Non-Repetitive Peak Forward Surge Current 8.3ms  
Single Half Sine-Wave Superimposed on Rated Load  
Non-Repetitive Avalanche Energy  
(TJ = 25ºC, IAS = 20A, L = 8.5 mH)  
Repetitive Peak Avalanche Power  
IO  
280  
IFSM  
EAS  
800  
mJ  
W
9800  
PARM  
(1µs, 25ºC)  
Thermal Characteristics  
Characteristic  
Symbol  
Value  
Unit  
Typical Thermal Resistance  
Thermal Resistance Junction to Case  
ºC/W  
2
Rθ  
JC  
Operating and Storage Temperature Range  
-65 to +150  
ºC  
TJ, TSTG  
Electrical Characteristics @T = 25°C unless otherwise specified  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
Test Condition  
IF = 15A, TJ = 25ºC  
IF = 30A, TJ = 25ºC  
IF = 15A, TJ = 125ºC  
IF = 30A, TJ = 125ºC  
0.41  
0.50  
0.34  
0.45  
0.54  
0.37  
0.5  
Forward Voltage Drop (per leg)  
-
V
VF  
V
R = 30V, TJ = 25ºC  
0.33  
40  
1.5  
100  
Leakage Current (Note 1)  
-
mA  
IR  
VR = 30V, TJ = 125ºC  
Notes:  
1. Short duration pulse test used to minimize self-heating effect.  
2. EU Directive 2002/95/EC (RoHS). All applicable RoHS exemptions applied, see EU Directive 2002/95/EC Annex Notes.  
SBR is a registered trademark of Diodes Incorporated.  
SBR30U30CT  
1 of 4  
www.diodes.com  
January 2009  
© Diodes Incorporated  
Document number: DS31063 Rev. 7 - 2  

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