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SBR2060CTFP-JT-G PDF预览

SBR2060CTFP-JT-G

更新时间: 2024-11-01 13:13:15
品牌 Logo 应用领域
美台 - DIODES 整流二极管局域网软恢复二极管快速软恢复二极管
页数 文件大小 规格书
3页 183K
描述
Rectifier Diode, 1 Phase, 2 Element, 10A, 60V V(RRM), Silicon, TO-220AB, GREEN, PLASTIC, ITO-220AB, 3 PIN

SBR2060CTFP-JT-G 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:TO-220AB
包装说明:GREEN, PLASTIC, ITO-220AB, 3 PIN针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.29
Is Samacsys:N应用:GENERAL PURPOSE
外壳连接:ISOLATED配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.7 VJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
最大非重复峰值正向电流:150 A元件数量:2
相数:1端子数量:3
最高工作温度:150 °C最低工作温度:-65 °C
最大输出电流:10 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):260最大重复峰值反向电压:60 V
最大反向电流:500 µA子类别:Rectifier Diodes
表面贴装:NO端子面层:MATTE TIN
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:40Base Number Matches:1

SBR2060CTFP-JT-G 数据手册

 浏览型号SBR2060CTFP-JT-G的Datasheet PDF文件第2页浏览型号SBR2060CTFP-JT-G的Datasheet PDF文件第3页 
SBR2060CT  
SBR2060CTFP  
20A SBR®  
Super Barrier Rectifier  
Features  
Mechanical Data  
Low Forward Voltage Drop  
Excellent High Temperature Stability  
Super Barrier Design  
Soft, Fast Switching Capability  
Molded Plastic TO-220AB,  
and ITO-220AB packages  
Case Material: Molded Plastic, UL Flammability  
Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminals: Matte Tin Finish annealed over  
Copper leadframe. Solderable per MIL-STD-202,  
Method 208  
Marking: See Page 3  
Ordering Information: See Page 3  
Lead Free Finish, RoHS Compliant (Note 2)  
Maximum Ratings @ TA = 25ºC unless otherwise specified  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Characteristic  
Symbol  
Value  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VRM  
60  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
42  
20  
V
A
Average Rectified Output Current @ TC = 110ºC  
Non-Repetitive Peak Forward Surge Current 8.3ms  
Single Half Sine-Wave Superimposed on Rated Load  
IFSM  
IRRM  
150  
2
A
A
Peak Repetitive Reverse Surge Current (2uS-1Khz)  
Maximum Thermal Resistance (per leg)  
Package = TO-220AB  
Package = ITO-220AB  
RӨJC  
2
4
°C/W  
ºC  
Operating and Storage Temperature Range  
TJ, TSTG  
-65 to +150  
Electrical Characteristics @ TA = 25ºC unless otherwise specified  
Min  
Typ  
Max  
Unit  
Characteristic  
Symbol  
Test Condition  
Reverse Breakdown Voltage (Note 1)  
V(BR)R  
60  
-
-
V
V
IR = 0.5 mA  
-
0.70  
0.65  
IF = 10A, TJ = 25ºC  
IF = 10A,TJ = 125ºC  
Forward Voltage Drop  
Leakage Current (Note 1)  
Notes:  
VF  
IR  
-
-
0.49  
0.5  
VR = 60V, TJ = 25 ºC  
VR = 60V, TJ = 125 ºC  
-
mA  
100  
1. Short duration pulse test used to minimize self-heating effect.  
2. RoHS revision 13.2.2003. High temperature solder exemption applied, see EU Directive Annex Note 7.  
_________  
SBR is a registered trademark of Diodes Incorporated.  
SBR2060 Rev. 2  
1 of 3  
www.diodes.com  
January 2007  
© Diodes Incorporated  

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