CURRENT 20.0Amperes
VOLTAGE 20 to 100 Volts
SBR2020 THRU SBR20100
Features
· Plastic Package has Underwriters Laboratory
Flammability Classification 94V-0
· Metal silicon junction, majority carrier conduction
· Guard ring for overvoltage protection
· Low power loss, high efficiency
· High current capability, Low forward voltage drop
· High surge capability
· For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
· Dual rectifier construction
TO-220
.180
(4.6)
3.8 +.2
HOLE THRU
.412
(10.5)
MAX.
.050
(1.27)
.108
(2.75)
.248
(6.3)
.595
(15.1)
MAX.
· High temperature soldering guaranteed:
250℃/10 seconds, 0.25" (6.35mm) from case
.550
(14.0)
MIN.
.051
MAX.
MAX.
(1.3)
.040
(1.0)
.158
(4.0)
MAX.
.100
(2.54)
.120
(3.05)
Mechanical Data
PIN 1
PIN 3
PIN 1
PIN 3
· Case : JEDEC TO-220 molded plastic body
· Terminals : Lead solderable per
+
CASE
PIN 2
CASE
PIN 2
Positive CT
Suffix "C"
Negative CT
Suffix "A"
MIL-STD-750, Method 2026
· Polarity : As marked. No suffix indicates Common
Cathode, suffix "A" indicates Common Anode
· Mounting Position : Any
Dimensions in inches and (millimeters)
· Weight : 0.08ounce, 2.24 grams
Maximum Ratings and Electrical Characteristics
(Ratings at 25℃ ambient temperature unless otherwise specified, single phase, half wave, resistive or inductive
load. For capacitive load, derate by 20%)
SBR
2020
SBR
2030
SBR
2040
SBR
2050
SBR
SBR
SBR
Symbols
Units
Volts
Volts
Volts
2060 2080 20100
50
35
50
Maximum repetitive peak reverse voltage
Maximum RMS voltage
V
RRM
RMS
20
14
20
30
21
30
40
28
40
60
42
60
80
56
80
100
70
V
Maximum DC blocking voltage
V
DC
100
Maximum average forward rectified current
at Tc=105℃
I(AV
)
20.0
Amps
Amps
Peak forward surge current 8.3ms single half
sine-wave superimposed on rated load
(JEDEC method)
IFSM
150.0
125.0
Maximum instantaneous forward voltage
at 10A (Note 1)
V
F
0.60
0.75
0.90
Volts
mA
Maximum instantaneous reverse
current at rated DC blocking
voltage (Note1)
T
T
A
A
=25℃
1.0
IR
=100℃
100.0
3.0
Typical thermal resistance (Note 2)
Operating junction temperature range
Storage temperature range
RθJC
℃/W
℃
T
J
-50 to +125
-65 to +150
℃
T
STG
Notes:
(1) Pulse test: 300μS pulse width, 1% duty cycle
(2) Thermal resistance from junction to case