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SBR20A100CTFP-JT PDF预览

SBR20A100CTFP-JT

更新时间: 2024-11-01 20:00:55
品牌 Logo 应用领域
美台 - DIODES 软恢复二极管快速软恢复二极管局域网LTE
页数 文件大小 规格书
4页 134K
描述
Rectifier Diode, 1 Phase, 2 Element, 10A, 100V V(RRM), Silicon, TO-220AB, ROHS COMPLIANT, PLASTIC, ALTERNATE ITO-220AB, 3 PIN

SBR20A100CTFP-JT 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-220AB
包装说明:ROHS COMPLIANT, PLASTIC, ALTERNATE ITO-220AB, 3 PIN针数:4
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.28
应用:FAST SOFT RECOVERY外壳连接:ISOLATED
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.64 V
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3最大非重复峰值正向电流:250 A
元件数量:2相数:1
端子数量:3最高工作温度:175 °C
最低工作温度:-65 °C最大输出电流:10 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):260
认证状态:Not Qualified最大重复峰值反向电压:100 V
子类别:Rectifier Diodes表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:40
Base Number Matches:1

SBR20A100CTFP-JT 数据手册

 浏览型号SBR20A100CTFP-JT的Datasheet PDF文件第2页浏览型号SBR20A100CTFP-JT的Datasheet PDF文件第3页浏览型号SBR20A100CTFP-JT的Datasheet PDF文件第4页 
SBR20A100CT  
SBR20A100CTFP  
20A SBR®  
SUPER BARRIER RECTIFIER  
Features  
Mechanical Data  
Low Forward Voltage Drop  
Excellent High Temperature Stability  
Patented Super Barrier Rectifier Technology  
Soft, Fast Switching Capability  
Lead Free Finish, RoHS Compliant (Note 2)  
Also Available in Green Molding Compound (Note 4)  
Case: TO-220AB, ITO-220AB  
Case Material: Molded Plastic, UL Flammability Classification  
Rating 94V-0  
Terminals: Matte Tin Finish annealed over Copper leadframe.  
Solderable per MIL-STD-202, Method 208  
Marking Information: See Page 2  
Ordering Information: See Page 2  
Weight: TO-220AB – 1.85 grams (approximate)  
ITO-220AB – 1.65 grams (approximate)  
ITO-220AB  
Top View  
ITO-220AB  
Bottom View  
TO-220AB  
Bottom View  
TO-220AB  
Top View  
Package Pin Out  
Configuration  
Maximum Ratings (Per Leg) @T = 25°C unless otherwise specified  
A
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitance load, derate current by 20%.  
Characteristic  
Symbol  
VRRM  
VRWM  
VRM  
Value  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
100  
V
Average Rectified Output Current per Device  
(Per Leg)  
(Total)  
10  
20  
A
IO  
Non-Repetitive Peak Forward Surge Current 8.3ms  
Single Half Sine-Wave Superimposed on Rated Load  
Peak Repetitive Reverse Surge Current (2uS-1Khz)  
Isolation Voltage (ITO-220AB Only)  
From Terminal to Heatsink t = 3 sec  
250  
3
A
A
V
IFSM  
IRRM  
VAC  
2000  
Thermal Characteristics (Per Leg)  
Characteristic  
Typical Thermal Resistance  
Package = TO-220AB  
Package = ITO-220AB  
Operating and Storage Temperature Range  
Symbol  
Value  
Unit  
ºC/W  
ºC  
2
4
Rθ  
JC  
-65 to +175  
TJ, TSTG  
Electrical Characteristics (Per Leg) @T = 25°C unless otherwise specified  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
Test Condition  
IF = 10A, TJ = 25ºC  
IF = 10A, TJ = 125ºC  
IF = 20A, TJ = 25ºC  
VR = 100V, TJ = 25ºC  
-
0.60  
-
0.75  
0.64  
0.85  
Forward Voltage Drop  
-
V
VF  
0.1  
10  
Leakage Current (Note 1)  
-
-
mA  
IR  
V
R = 100V, TJ = 125ºC  
Notes:  
1. Short duration pulse test used to minimize self-heating effect.  
2. EU Directive 2002/95/EC (RoHS). All applicable RoHS exemptions applied, see EU Directive 2002/95/EC Annex Notes.  
SBR is a registered trademark of Diodes Incorporated.  
SBR20A100  
1 of 4  
www.diodes.com  
July 2010  
© Diodes Incorporated  
Document number: DS30966 Rev. 10 - 2  

SBR20A100CTFP-JT 替代型号

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