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SBR20A200CTB PDF预览

SBR20A200CTB

更新时间: 2024-09-27 04:05:39
品牌 Logo 应用领域
美台 - DIODES 整流二极管超快速软恢复二极管
页数 文件大小 规格书
3页 273K
描述
Super Barrier Rectifier

SBR20A200CTB 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:D2PAK
包装说明:ROHS COMPLIANT, PLASTIC, D2PAK-3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80Factory Lead Time:16 weeks
风险等级:2.2Is Samacsys:N
应用:SUPER FAST SOFT RECOVERY外壳连接:CATHODE
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.72 V
JEDEC-95代码:TO-263ABJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:180 A元件数量:2
相数:1端子数量:2
最高工作温度:175 °C最低工作温度:-65 °C
最大输出电流:20 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大重复峰值反向电压:200 V最大反向恢复时间:0.03 µs
子类别:Rectifier Diodes表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:40
Base Number Matches:1

SBR20A200CTB 数据手册

 浏览型号SBR20A200CTB的Datasheet PDF文件第2页浏览型号SBR20A200CTB的Datasheet PDF文件第3页 
SPICE MODEL: SBR20A200CTB  
SBR20A200CTB  
20A SBR®  
Super Barrier Rectifier  
Features  
Mechanical Data  
Low Forward Voltage Drop  
Low Leakage Current  
Case Material: Molded Plastic, UL Flammability  
Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminals: Matte Tin Finish annealed over  
Copper leadframe. Solderable per MIL-STD-202,  
Method 208  
Excellent High Temperature Stability  
Patented Super Barrier Rectifier Technology  
Soft, Fast Switching Capability  
175ºC Operating Junction Temperature  
Molded Plastic D2Pak package  
Marking: See Page 3  
Ordering Information: See Page 3  
Lead Free Finish, RoHS Compliant (Note 2)  
Maximum Ratings @ TA = 25ºC unless otherwise specified  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Characteristic  
Symbol  
Value  
Unit  
VRRM  
VRWM  
VRM  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
200  
V
RMS Reverse Voltage  
141  
20  
V
A
VR(RMS)  
IO  
Average Rectified Output Current @ TC = 150ºC  
Non-Repetitive Peak Forward Surge Current 8.3ms  
Single Half Sine-Wave Superimposed on Rated Load  
180  
A
IFSM  
Maximum Thermal Resistance (per leg)  
Thermal Resistance Junction to Case (Note 3)  
Thermal Resistance, Junction to Ambient (Note 3)  
RθJC  
RθJA  
4
43  
°C/W  
ºC  
Operating and Storage Temperature Range  
-65 to +175  
TJ, TSTG  
Electrical Characteristics @ TA = 25ºC unless otherwise specified  
Min  
Typ  
Max  
Unit  
Characteristic  
Symbol  
Test Condition  
Reverse Breakdown Voltage (Note 1)  
200  
-
-
V
V(BR)R  
IR = 0.1 mA  
IF = 10A, TJ = 25ºC  
IF = 20A, TJ = 25ºC  
IF = 10A,TJ = 125ºC  
-
-
0.86  
0.96  
0.72  
Forward Voltage Drop  
-
-
V
VF  
0.66  
0.003  
0.51  
0.1  
10  
VR = 200V, TJ = 25 ºC  
Leakage Current (Note 1)  
mA  
IR  
V
R = 200V, TJ = 125 ºC  
Notes:  
1. Short duration pulse test used to minimize self-heating effect.  
2. RoHS revision 13.2.2003. High temperature solder exemption applied, see EU Directive Annex Note 7.  
3. FR-4 PCB, 2 oz. Copper, minimum recommended pad layout per http://www.diodes.com/datasheets/ap02001.pdf  
__________  
SBR is a registered trademark of Diodes Incorporated.  
SBR20A200CTB Rev. 2 - 2  
1 of 3  
www.diodes.com  
May 2007  
© Diodes Incorporated  

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