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SBR20A100CTFP-G PDF预览

SBR20A100CTFP-G

更新时间： 2024-11-01 13:13:15
品牌 Logo 应用领域
美台 - DIODES 整流二极管局域网软恢复二极管快速软恢复二极管
页数 文件大小 规格书
3页 184K
描述
Rectifier Diode, 1 Phase, 2 Element, 10A, 100V V(RRM), Silicon, TO-220AB, GREEN, PLASTIC, ITO-220AB, 3 PIN

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SBR20A100CTFP-G 技术参数

是否无铅：含铅是否Rohs认证：符合
生命周期：Active零件包装代码：TO-220AB
包装说明：GREEN, PLASTIC, ITO-220AB, 3 PIN针数：3
Reach Compliance Code：not_compliantECCN代码：EAR99
HTS代码：8541.10.00.80Factory Lead Time：15 weeks
风险等级：5.25Is Samacsys：N
应用：FAST SOFT RECOVERY外壳连接：ISOLATED
配置：COMMON CATHODE, 2 ELEMENTS二极管元件材料：SILICON
二极管类型：RECTIFIER DIODE最大正向电压 (VF)：0.64 V
JEDEC-95代码：TO-220ABJESD-30 代码：R-PSFM-T3
JESD-609代码：e3最大非重复峰值正向电流：250 A
元件数量：2相数：1
端子数量：3最高工作温度：175 °C
最低工作温度：-65 °C最大输出电流：10 A
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：260
认证状态：Not Qualified最大重复峰值反向电压：100 V
子类别：Rectifier Diodes表面贴装：NO
端子面层：Matte Tin (Sn)端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：40
Base Number Matches：1

SBR20A100CTFP-G 数据手册

 浏览型号SBR20A100CTFP-G的Datasheet PDF文件第2页浏览型号SBR20A100CTFP-G的Datasheet PDF文件第3页 
SBR20A100CT  
SBR20A100CTFP  
20A SBR®  
Super Barrier Rectifier  
Features  
Mechanical Data  
•
•
•
•
•
Low Forward Voltage Drop  
Excellent High Temperature Stability  
Super Barrier Design  
Soft, Fast Switching Capability  
Molded Plastic TO-220AB,  
and ITO-220AB packages  
•
Case Material: Molded Plastic, UL Flammability  
Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminals: Matte Tin Finish annealed over  
Copper leadframe. Solderable per MIL-STD-202,  
Method 208  
•
•
•
•
Marking: See Page 3  
Ordering Information: See Page 3  
•
Lead Free Finish, RoHS Compliant (Note 2)  
Maximum Ratings @ TA = 25ºC unless otherwise specified  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Characteristic  
Symbol  
Value  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VRM  
100  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
71  
20  
V
A
Average Rectified Output Current @ TC = 150ºC  
Non-Repetitive Peak Forward Surge Current 8.3ms  
Single Half Sine-Wave Superimposed on Rated Load  
IFSM  
IRRM  
180  
3
A
A
Peak Repetitive Reverse Surge Current (2uS-1Khz)  
Maximum Thermal Resistance (per leg)  
Package = TO-220AB  
Package = ITO-220AB  
RӨJC  
2
4
°C/W  
ºC  
Operating and Storage Temperature Range  
TJ, TSTG  
-65 to +175  
Electrical Characteristics @ TA = 25ºC unless otherwise specified  
Min  
Typ  
Max  
Unit  
Characteristic  
Symbol  
Test Condition  
Reverse Breakdown Voltage (Note 1)  
V(BR)R  
100  
-
-
V
IR = 0.1 mA  
-
0.60  
-
0.75  
0.64  
0.85  
IF = 10A, TJ = 25ºC  
IF = 10A,TJ = 125ºC  
Forward Voltage Drop  
VF  
-
-
V
IF = 20A, TJ = 25ºC  
0.1  
10  
VR = 100V, TJ = 25 ºC  
VR = 100V, TJ = 125 ºC  
Leakage Current (Note 1)  
Notes:  
IR  
-
mA  
1. Short duration pulse test used to minimize self-heating effect.  
2. RoHS revision 13.2.2003. High temperature solder exemption applied, see EU Directive Annex Note 7.  
__________  
SBR is a registered trademark of Diodes Incorporated.  
SBR20A100 Rev. 2  
1 of 3  
www.diodes.com  
January 2007  
© Diodes Incorporated  
123

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SBR20A100CTFP-G 替代型号

型号 品牌 替代类型 描述 数据表
SBR20A100CTFP-JT DIODES

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 Rectifier Diode, 1 Phase, 2 Element, 10A, 100V V(RRM), Silicon, TO-220AB, ROHS COMPLIANT,
SBR20A100CTFP DIODES

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