5秒后页面跳转
SBR10U150CTE-G PDF预览

SBR10U150CTE-G

更新时间: 2024-09-08 20:06:59
品牌 Logo 应用领域
美台 - DIODES 超快速软恢复二极管
页数 文件大小 规格书
3页 71K
描述
Rectifier Diode, 1 Phase, 1 Element, 10A, 150V V(RRM), Silicon, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN

SBR10U150CTE-G 技术参数

生命周期:Obsolete零件包装代码:TO-262AA
包装说明:R-PSIP-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.69
应用:SUPER FAST SOFT RECOVERY配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:TO-262AAJESD-30 代码:R-PSIP-T3
JESD-609代码:e3最大非重复峰值正向电流:150 A
元件数量:1相数:1
端子数量:3最高工作温度:175 °C
最低工作温度:-55 °C最大输出电流:10 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE认证状态:Not Qualified
最大重复峰值反向电压:150 V表面贴装:NO
端子面层:MATTE TIN端子形式:THROUGH-HOLE
端子位置:SINGLEBase Number Matches:1

SBR10U150CTE-G 数据手册

 浏览型号SBR10U150CTE-G的Datasheet PDF文件第2页浏览型号SBR10U150CTE-G的Datasheet PDF文件第3页 
SBR10U150CTE  
10A SBR®  
SUPER BARRIER RECTIFIER  
Features  
Mechanical Data  
Ultra Low Forward Voltage Drop  
Excellent High Temperature Stability  
Case: TO-262  
Case Material: Molded Plastic, UL Flammability Classification  
Rating 94V-0  
Terminals: Matte Tin Finish annealed over Copper leadframe.  
Solderable per MIL-STD-202, Method 208  
Marking Information: See Page 2  
Ordering Information: See Page 2  
Weight: 1.355 grams (approximate)  
Patented Super Barrier Rectifier Technology  
Soft, Fast Switching Capability  
150ºC Operating Junction Temperature  
Lead Free Finish, RoHS Compliant (Note 2)  
Also Avilable in Green Molding Compound (Note 5)  
Maximum Ratings @T = 25°C unless otherwise specified  
A
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitance load, derate current by 20%.  
Characteristic  
Symbol  
VRRM  
VRWM  
VRM  
Value  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
150  
V
RMS Reverse Voltage  
106  
10  
V
A
VR(RMS)  
IO  
Average Rectified Output Current  
Non-Repetitive Peak Forward Surge Current 8.3ms  
Single Half Sine-Wave Superimposed on Rated Load  
150  
A
IFSM  
Thermal Characteristics @T = 25°C unless otherwise specified  
A
Characteristic  
Maximum Thermal Resistance (per leg)  
Thermal Resistance Junction to case (Note 3)  
Symbol  
Rθ  
Value  
2.2  
Unit  
ºC/W  
ºC  
JC  
Operating and Storage Temperature Range  
-55 to +175  
TJ, TSTG  
Electrical Characteristics @T = 25°C unless otherwise specified  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
Test Condition  
Reverse Breakdown Voltage (Note 1)  
150  
-
-
V
V(BR)R  
IR = 0.25mA  
IF = 5A, TJ = 25ºC  
IF = 5A, TJ = 125ºC  
0.75  
-
0.81  
0.65  
Forward Voltage Drop (per leg)  
Leakage Current (Note 1)  
-
V
VF  
IR  
V
R = 150V, TJ = 25ºC  
-
-
-
-
0.2  
25  
mA  
mA  
VR = 150V, TJ = 125ºC  
Notes:  
1. Short duration pulse test used to minimize self-heating effect.  
2. EU Directive 2002/95/EC (RoHS). All applicable RoHS exemptions applied, see EU Directive 2002/95/EC Annex Notes.  
3. Using heatsink (by Black Aluminum, 45mm x 20mm x 12mm)  
SBR is a registered trademark of Diodes Incorporated.  
SBR10U150CTE  
1 of 3  
www.diodes.com  
April 2010  
© Diodes Incorporated  
Document number: DS32141 Rev. 1 - 2  

与SBR10U150CTE-G相关器件

型号 品牌 获取价格 描述 数据表
SBR10U150CTF DIODES

获取价格

Rectifier Diode, 1 Phase, 2 Element, 10A, 150V V(RRM), Silicon, TO-220AB, ROHS COMPLIANT,
SBR10U150CTFP DIODES

获取价格

10A SBR Super Barrier Rectifier
SBR10U150CTFP-G DIODES

获取价格

SUPER BARRIER RECTIFIER
SBR10U150CTFP-JT DIODES

获取价格

SUPER BARRIER RECTIFIER
SBR10U150CT-G DIODES

获取价格

SUPER BARRIER RECTIFIER
SBR10U150CTI DIODES

获取价格

Rectifier Diode, 1 Phase, 2 Element, 10A, 150V V(RRM), Silicon, TO-262AA, PLASTIC, TO-262,
SBR10U200_15 DIODES

获取价格

10A SBR® SUPER BARRIER RECTIFIER
SBR10U200CT DIODES

获取价格

10A SBR Super Barrier Rectifier
SBR10U200CT_08 DIODES

获取价格

10A SBR㈢ SUPER BARRIER RECTIFIER
SBR10U200CTB DIODES

获取价格

10A SBR Super Barrier Rectifier