CURRENT 7.5Amperes
VOLTAGE 35 to 60 Volts
SBP735 THRU SBP760
Features
· Plastic Package has Underwriters Laboratory
Flammability Classification 94V-0
· Metal silicon junction, majority carrier conduction
· Guard ring for overvoltage protection
· Low power loss, high efficiency
ITO-220A
0.2
4.5
0.5
3.2
10
2.7
· High current capability, Low forward voltage drop
· Single rectifier construction
· High surge capability
· For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
· High temperature soldering guaranteed :
250℃/10 seconds, 0.25"(6.35mm) from case
0.2
1.3
0.2
0.7
0.5
2.4
5.08
Mechanical Data
· Case : JEDEC ITO-220A molded plastic body
· Terminals : Lead solderable per
MIL-STD-750, Method 2026
PIN 1+
PIN 2
PIN 1
PIN 2+
Case Negative
+
CASE
CASE
CasePositive
Suffix"R"
· Polarity : As marked
· Mounting Position : Any
· Weight : 0.08 ounce, 2.24 gram
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
(Ratings at 25℃ ambient temperature unless otherwise specified, single phase, half wave, resistive or inductive
load. For capacitive load, derate by 20%)
SBP745
45
Symbols
SBP735
35
SBP750
50
SBP760
60
Units
Volts
Volts
Volts
Maximum repetitive peak reverse voltage
Maximum RMS voltage
V
V
RRM
RMS
25
32
35
42
Maximum DC blocking voltage
V
DC
35
45
50
60
Maximum average forward rectified current
(see Fig. 1)
I(AV
)
7.5
Amps
Amps
Repetitive peak forward current(square wavr,
20KHZ) at TC=105℃
IFRM
15.0
Peak forward surge current 8.3ms single half
sine-wave superimposed on rated load
(JEDEC method)
IFSM
150.0
Amps
Maximum instantaneous forward voltage
at 7.5A (Note 1)
0.65
15
0.75
50
Volts
mA
V
F
Maximum instantaneous reverse
current at rated DC blocking
voltage (Note1)
1.0
5.0
T
T
A
=25℃
IR
A=125℃
℃/W
℃
Typical thermal resistance (Note 2)
Operating junction temperature range
Storage temperature range
RθJC
T
J
-65 to +150
-65 to +150
℃
TSTG
Notes:
(1) Pulse test: 300μS pulse width, 1% duty cycle
(2) Thermal resistance from junction to case