Datasheet > SBP745

SBP745

更新时间： 2024-11-24 03:33:31

品牌	Logo	应用领域
DAESAN		/
页数	文件大小	规格书
2页	382K
描述
CURRENT 7.5Amperes VOLTAGE 35 to 60 Volts

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中文翻译

获取价格

数据手册

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SBP745 数据手册

CURRENT 7.5Amperes

VOLTAGE 35 to 60 Volts

SBP735 THRU SBP760

Features

· Plastic Package has Underwriters Laboratory

Flammability Classification 94V-0

· Metal silicon junction, majority carrier conduction

· Guard ring for overvoltage protection

· Low power loss, high efficiency

ITO-220A

0.2

4.5

0.5

3.2

2.7

· High current capability, Low forward voltage drop

· Single rectifier construction

· High surge capability

· For use in low voltage, high frequency inverters,

free wheeling, and polarity protection applications

· High temperature soldering guaranteed :

250℃/10 seconds, 0.25"(6.35mm) from case

0.2

1.3

0.2

0.7

0.5

2.4

5.08

Mechanical Data

· Case : JEDEC ITO-220A molded plastic body

· Terminals : Lead solderable per

MIL-STD-750, Method 2026

PIN 1⁺

PIN 2

PIN 1

PIN 2⁺

Case Negative

CASE

CasePositive

Suffix"R"

· Polarity : As marked

· Mounting Position : Any

· Weight : 0.08 ounce, 2.24 gram

Dimensions in inches and (millimeters)

Maximum Ratings and Electrical Characteristics

(Ratings at 25℃ ambient temperature unless otherwise specified, single phase, half wave, resistive or inductive

load. For capacitive load, derate by 20%)

SBP745

Symbols

SBP735

SBP750

SBP760

Units

Volts

Maximum repetitive peak reverse voltage

Maximum RMS voltage

RRM

RMS

Maximum DC blocking voltage

Maximum average forward rectified current

(see Fig. 1)

I(AV

)

7.5

Amps

Repetitive peak forward current(square wavr,

20KHZ) at TC=105℃

IFRM

15.0

Peak forward surge current 8.3ms single half

sine-wave superimposed on rated load

(JEDEC method)

IFSM

150.0

Amps

Maximum instantaneous forward voltage

at 7.5A (Note 1)

0.65

0.75

Volts

Maximum instantaneous reverse

current at rated DC blocking

voltage (Note1)

1.0

5.0

=25℃

A=125℃

℃/W

℃

Typical thermal resistance (Note 2)

Operating junction temperature range

Storage temperature range

RθJC

-65 to +150

℃

TSTG

Notes:

(1) Pulse test: 300μS pulse width, 1% duty cycle

(2) Thermal resistance from junction to case

中文翻译

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