Datasheet > SBC846

SBC846

更新时间： 2024-09-26 01:10:55

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安森美 - ONSEMI		/
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描述
General Purpose Transistors

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数据手册

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SBC846 数据手册

BC846, SBC846, BC847,

SBC847, BC848 Series

General Purpose

Transistors

NPN Silicon

http://onsemi.com

These transistors are designed for general purpose amplifier

applications. They are housed in the SC−70/SOT−323 which is

designed for low power surface mount applications.

COLLECTOR

Features

• AEC−Q101 Qualified and PPAP Capable

BASE

• S Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

EMITTER

SC−70/SOT−323

CASE 419

STYLE 3

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector-Emitter Voltage

CEO

CBO

EBO

BC846, SBC846

BC847, SBC847

BC848

MARKING DIAGRAM

Collector-Base Voltage

BC846, SBC846

BC847, SBC847

BC848

XX MG

Emitter-Base Voltage

BC846, SBC846

BC847, SBC847

BC848

6.0

5.0

= Specific Device Code

= Month Code

= Pb−Free Package

(Note: Microdot may be in either location)

Collector Current − Continuous

100

mAdc

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 12 of this data sheet.

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

150

833

Unit

Total Device Dissipation FR−5 Board,

(Note 1) T = 25°C

Thermal Resistance,

Junction−to−Ambient

°C/W

°C

Junction and Storage Temperature

T , T

−55 to

stg

+150

1. FR−5 = 1.0 x 0.75 x 0.062 in.

Publication Order Number:

November, 2011 − Rev. 8

BC846AWT1/D

12 3 4 5 6 7...13

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