Datasheet > SBC817-25LT1G

SBC817-25LT1G

更新时间： 2024-11-13 15:50:39

品牌	Logo	应用领域
固锝 - GOOD-ARK		光电二极管晶体管
页数	文件大小	规格书
9页	386K
描述
Small Signal Bipolar Transistor,

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中文翻译

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技术参数
数据手册

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SBC817-25LT1G 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.7
Base Number Matches：	1

SBC817-25LT1G 数据手册

SBC817-16/25/40

NPN General Purpose Transistors

FEATURES

l High Current

l Low Voltage

l General Purpose Switching and Amplification

Package: SOT-23

MAXIMUM RATINGS

COLLECTOR

Rating

Symbol

V _CEO

V _CBO

V _EBO

I _C

Value

Unit

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

BASE

5.0

EMITTER

Collector Current — Continuous

500

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR– 5 Board, (1)

T_A= 25°C

P _D

225

1.8

mW/°C

°C/W

Derate above 25°C

Thermal Resistance, Junction to Ambient

Total Device Dissipation

R _θJA

P _D

556

Alumina Substrate, (2) T_A= 25°C

Derate above 25°C

300

2.4

mW/°C

°C/W

°C

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

R _θJA

417

T _J, T _stg

–55 to +150

ELECTRICAL CHARACTERISTICS (T =25°C unless otherwise noted )

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(I_C= 10 mA)

V _(BR)CEO

—

Collector–Emitter Breakdown Voltage

(V_EB= 0, I_C= 10 µA)

V _(BR)CES

Emitter–Base Breakdown Voltage

(I _E= 1.0 µA)

V _(BR)EBO

I _CBO

5.0

Collector Cutoff Current

(V_CB= 20 V)

—

100

5.0

(V_CB= 20 V, T_A= 150°C)

µA

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

1/9

12 3 4 5 6 7...9

中文翻译

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