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SBC817-40LT3 PDF预览

SBC817-40LT3

更新时间: 2024-09-24 21:54:03
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号双极晶体管开关光电二极管
页数 文件大小 规格书
4页 62K
描述
General Purpose Transistors(NPN Silicon)

SBC817-40LT3 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SOT-23包装说明:CASE 318-08, TO-236, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.2Is Samacsys:N
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:45 V
配置:SINGLE最小直流电流增益 (hFE):250
JEDEC-95代码:TO-236ABJESD-30 代码:R-PDSO-G3
JESD-609代码:e0湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):240极性/信道类型:NPN
最大功率耗散 (Abs):0.3 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzBase Number Matches:1

SBC817-40LT3 数据手册

 浏览型号SBC817-40LT3的Datasheet PDF文件第2页浏览型号SBC817-40LT3的Datasheet PDF文件第3页浏览型号SBC817-40LT3的Datasheet PDF文件第4页 
BC817−16LT1,  
BC817−25LT1, BC817−40LT1  
General Purpose  
Transistors  
NPN Silicon  
http://onsemi.com  
Features  
COLLECTOR  
3
Pb−Free Packages are Available  
1
BASE  
MAXIMUM RATINGS  
Rating  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
Symbol Value  
Unit  
V
2
EMITTER  
V
CEO  
V
CBO  
V
EBO  
45  
50  
V
5.0  
500  
V
Collector Current − Continuous  
I
C
mAdc  
3
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits  
are exceeded, device functional operation is not implied, damage may occur  
and reliability may be affected.  
1
2
THERMAL CHARACTERISTICS  
SOT−23  
CASE 318  
STYLE 6  
Characteristic  
Symbol  
Max  
Unit  
Total Device Dissipation FR5 Board, (Note 1)  
P
D
T = 25°C  
225  
1.8  
mW  
mW/°C  
A
Derate above 25°C  
MARKING DIAGRAM  
Thermal Resistance, Junction−to−Ambient  
Total Device Dissipation  
R
556  
°C/W  
q
JA  
P
D
Alumina Substrate, (Note 2) T = 25°C  
Derate above 25°C  
300  
2.4  
mW  
mW/°C  
A
xxD  
Thermal Resistance, Junction−to−Ambient  
Junction and Storage Temperature  
R
417  
°C/W  
°C  
q
JA  
T , T  
J
55 to  
+150  
stg  
xx  
D
= Specific Device Code  
= Date Code  
1. FR−5 = 1.0 x 0.75 x 0.062 in.  
2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
June, 2004 − Rev. 6  
BC817−16LT/D  
 

SBC817-40LT3 替代型号

型号 品牌 替代类型 描述 数据表
SBC817-40LT1 ONSEMI

完全替代

General Purpose Transistors(NPN Silicon)
BC817-40LT3G ONSEMI

类似代替

General Purpose Transistors(NPN Silicon)
BC817-40LT1G ONSEMI

类似代替

General Purpose Transistors(NPN Silicon)

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