SB830D

更新时间： 2024-11-05 04:05:43

品牌	Logo	应用领域
WTE		二极管瞄准线功效
页数	文件大小	规格书
4页	48K
描述
8.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

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中文翻译

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数据手册

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SB830D 数据手册

WTE

POWER SEMICONDUCTORS

SB820D – SB8100D

8.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

Features

Schottky Barrier Chip

Guard Ring Die Construction for

Transient Protection

Low Forward Voltage Drop

Low Power Loss, High Efficiency

High Surge Current Capability

For Use in Low Voltage, High Frequency

Inverters, Free Wheeling, and Polarity

Protection Applications

PIN 1

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ K

D²PAK/TO-263

Min

Mechanical Data

Dim

Max

10.40

10.60

4.80

9.10

—

Case: D²PAK/TO-263, Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

9.80

9.60

4.40

Polarity: See Diagram

Weight: 1.7 grams (approx.)

Mounting Position: Any

Marking: Type Number

Lead Free: For RoHS / Lead Free Version,

Add “-LF” Suffix to Part Number, See Page 4

PIN 1 +

PIN 3 -

8.50

Case

2.80

1.00

1.40

0.90

1.40

0.70

2.75

—

1.20

0.30

2.35

All Dimensions in mm

Maximum Ratings and Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.

Characteristic

Symbol

Unit

820D 830D 840D 845D 850D 860D 880D 8100D

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V^RRM

V^RWM

V^R

100

RMS Reverse Voltage

V^R(RMS)

I^O

Average Rectified Output Current @T_C= 100°C

8.0

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed

on rated load (JEDEC Method)

I^FSM

150

Forward Voltage

@I_F= 8.0A

V^FM

I^RM

0.55

0.75

0.85

Peak Reverse Current

@T_A= 25°C

0.5

At Rated DC Blocking Voltage @T_A= 100°C

Typical Junction Capacitance (Note 1)

Typical Thermal Resistance (Note 2)

C^j

400

3.0

°C/W

°C

R^ꢀ^JC

Operating and Storage Temperature Range

T^j, T^STG

-65 to +150

Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

2. Thermal resistance junction to case mounted on heatsink.

SB820D – SB8100D

1 of 4

12 3 4

中文翻译

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与SB830D相关器件

型号	品牌	获取价格	描述	数据表
SB830DC	PANJIT	获取价格	D2PAK SURFACE MOUNTSCHOTTKY BARRIER RECTIFIER(VOLTAGE- 20 to 100 Volts CURRENT - 8.0 Amper
SB830DC	WTE	获取价格	8.0A SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER
SB830DC	WON-TOP	获取价格	SMD
SB830DCN-T3	WTE	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 4A, 30V V(RRM), Silicon, TO-263AB, TO-263,
SB830DC-T3	WTE	获取价格	8.0A SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER
SB830DC-T3-LF	WTE	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 4A, 30V V(RRM), Silicon, TO-263AB, ROHS COM
SB830D-T3	WTE	获取价格	8.0A D2PAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
SB830D-T3-LF	WTE	获取价格	暂无描述
SB830-E	LRC	获取价格	Schottky Barrier Rectifiers Reverse Voltage 20 to 100V
SB830F	PACELEADER	获取价格	ISOLATION SCHOTTKY BARRIER RECTIFIER

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