Datasheet > SB835

SB835

更新时间： 2024-09-15 22:43:27

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描述
SCHOTTKY BARRIER RECTIFIER

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中文翻译

获取价格

数据手册

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SB835 数据手册

SHANGHAI SUNRISE ELECTRONICS CO., LTD.

SB820 THRU SB860

TECHNICAL

SPECIFICATION

SCHOTTKY BARRIER

RECTIFIER

VOLTAGE: 20 TO 60V CURRENT: 8.0A

FEATURES

• Epitaxial construction for chip

TO-220A

• High current capability

• Low forward voltage drop

• Low power loss, high efficiency

• High surge capability

• High temperature soldering guaranteed:

250^oC/10sec/0.375"(9.5mm) lead length

at 5 lbs tension

MECHANICAL DATA

• Terminal: Plated leads solderable per

MIL-STD 202E, method 208C

• Case: Molded with UL-94 Class V-O

recognized flame retardant epoxy

• Polarity: As marked

Dimensions in inches and (millimeters)

• Mounting position: Any

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

(Single-phase, half-wave, 60Hz, resistive or inductive load rating at 25^oC, unless otherwise stated, for capacitive

load, derate current by 20%)

RATINGS

SYMBOL

UNITS

820 830 835 840 850 860

V_RRM

V_RMS

V_DC

Maximum Repetitive Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward Rectified Current

(T_C=95^oC)

I_F(AV)

8.0

Peak Forward Surge Current (8.3ms single

half sine-wave superimposed on rated load)

Maximum Forward Voltage (at 8.0A DC)

I_FSM

V_F

I_R

150

0.65

700

0.75

450

^oC/W

^oC

T_a=25^oC

T_a=100^oC

5.0

Maximum DC Reverse Current

50.0

(at rated DC blocking voltage)

C_J

R_θ(ja)

T_J

Typical Junction Capacitance

Typical Thermal Resistance

Operating Junction Temperature

Storage Temperature

Note:

(Note 1)

(Note 2)

2.5

-65 to +125

-65 to +150

T_STG

1.Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc

2.Thermal resistance from junction to case

3. Suffix "R" for reverse polarity

http://www.sse-diode.com

中文翻译

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